5stp-08g6500 ABB Semiconductors, 5stp-08g6500 Datasheet

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5stp-08g6500

Manufacturer Part Number
5stp-08g6500
Description
Phase Control Thyristor
Manufacturer
ABB Semiconductors
Datasheet
• • • • Patented free-floating silicon technology
• • • • Low on-state and switching losses
• • • • Designed for traction, energy and industrial applications
• • • • Optimum power handling capability
Blocking
Maximum rated values
Characteristic values
V
Mechanical data
Maximum rated values
Characteristic values
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Symbol
V
V
V
dV/dt
Parameter
Forward leakage current
Reverse leakage current
Parameter
Mounting force
Acceleration
Acceleration
Parameter
Weight
Surface creepage distance
Air strike distance
V
V
I
I
I
V
r
T(AV)M
T(RMS)
TSM
DRM
DSM,
DRM,
RSM
T
DRM
DSM
(T0)
/ V
crit
V
V
RSM
RRM
RRM
=
=
=
=
=
=
are equal to V
=
Conditions
f = 5 Hz, t
f = 50 Hz, t
t
Exp. to 0.67 x V
p
= 5 ms, single pulse
11.8×10
1.015 mΩ Ω Ω Ω
1)
1)
5600 V
6500 V
1140 A
p
1.24 V
720 A
p
= 10 ms
DSM
= 10 ms
/ V
3
DRM
A
RSM
, T
values up to T
vj
= 125°C
Symbol Conditions
I
I
Symbol Conditions
F
a
a
Symbol Conditions
m
D
D
DSM
RSM
M
S
a
Phase Control Thyristor
V
V
vj
Device unclamped
Device clamped
DSM
RSM
= 110°C
5STP 08G6500
, T
, T
vj
vj
= 125°C
= 125°C
5STP 08G6500 5STP 08G6200 5STP 08G5800
6500 V
5600 V
7000 V
min
min
min
14
38
21
2000 V/µs
6200 V
5300 V
6700 V
typ
typ
typ
22
Doc. No. 5SYA1006-03 Apr. 03
max
max
max
0.65
200
200
100
24
50
5800 V
4900 V
6300 V
Unit
Unit
Unit
m/s
m/s
mm
mm
mA
mA
kN
kg
2
2

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5stp-08g6500 Summary of contents

Page 1

... Air strike distance 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Phase Control Thyristor 5STP 08G6500 5STP 08G6500 5STP 08G6200 5STP 08G5800 6500 V 5600 V 7000 V = 125°C ...

Page 2

On-state 1) Maximum rated values Parameter Symbol Conditions Average on-state current I T(AV)M RMS on-state current I T(RMS) Peak non-repetitive surge I TSM current 2 Limiting load integral I t Peak non-repetitive surge I TSM current 2 Limiting load integral ...

Page 3

Triggering 1) Maximum rated values Parameter Symbol Conditions Peak forward gate voltage V FGM Peak forward gate current I FGM Peak reverse gate voltage V RGM Average gate power loss P G(AV) Characteristic values Parameter Symbol Conditions Gate-trigger voltage V ...

Page 4

Max. on-state characteristic model ⋅ + ⋅ ln Tvj Tvj T Tvj Valid for I = 100 – 20000 129.90×10 492.00×10 216.4×10 ...

Page 5

Fig. 6 Surge on-state current vs. pulse length. Half- sine wave. I (t) G 100 % / Fig. 8 Recommended gate current ...

Page 6

Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors ...

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