ATP301_12 SANYO [Sanyo Semicon Device], ATP301_12 Datasheet
ATP301_12
Related parts for ATP301_12
ATP301_12 Summary of contents
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Ordering number : ENA1457A P-Channel Silicon MOSFET ATP301 General-Purpose Switching Device Applications Features ON-resistance R DS (on)=57m Ω (typ.) • 10V drive • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current ...
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Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall ...
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--60 Tc=25 ° C --50 --40 --30 --20 -- --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage (on 200 180 160 140 ...
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-- --60V -- --28A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge ...
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Taping Specifi cation ATP301-TL-H ATP301 No.A1457-5/7 ...
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Outline Drawing ATP301-TL-H ATP301 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No.A1457-6/7 ...
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Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", ...