ATP602_12 SANYO [Sanyo Semicon Device], ATP602_12 Datasheet
ATP602_12
Related parts for ATP602_12
ATP602_12 Summary of contents
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Ordering number : ENA1543A ATP602 Features ON-resistance R DS (on)=2.1 Ω (typ.) • 10V drive • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage ...
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Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall ...
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Drain-to-Source Voltage (on ...
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=200V = Total Gate Charge ...
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Taping Specifi cation ATP602-TL-H ATP602 No. A1543-5/7 ...
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Outline Drawing ATP602-TL-H ATP602 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No. A1543-6/7 ...
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Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", ...