FQD3P50_09 FAIRCHILD [Fairchild Semiconductor], FQD3P50_09 Datasheet

no-image

FQD3P50_09

Manufacturer Part Number
FQD3P50_09
Description
500V P-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FQD3P50_09.pdf (9 pages)
©2009 Fairchild Semiconductor Internati
FQD3P50 / FQU3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -2.1A, -500V, R
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQU Series
I-PAK
FQD3P50 / FQU3P50
Typ
--
--
--
DS(on)
-55 to +150
= 4.9
-1.33
-500
-2.1
-8.4
250
-2.1
-4.5
300
5.0
2.5
0.4
50
30
G
@V
! ! ! !
! ! ! !
Max
110
2.5
50
January 2009
GS
QFET
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
D
S
! ! ! !
! ! ! !
● ●
●
● ●
●
● ●
●
● ●
●
●
●
● ●
● ●
●
●
●
●
●
●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A2, January 2009
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD3P50_09

Image
Part Number
Description
Manufacturer
Datasheet
Request R
FQD3P50
Part Number:
FQD3P50
Description:
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer:
Fairchild Semiconductor
Datasheet:
FQD3P50.pdf (9 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FSB117H
Part Number:
FSB117H
Description:
The FSB117H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
FSB147H
Part Number:
FSB147H
Description:
The FSB147H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB147H.pdf (18 pages)
FSB127H
Part Number:
FSB127H
Description:
The FSB127H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)

FQD3P50_09 Summary of contents

Page 1

FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ...

Page 2

Elerical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

Typical Characteristics V GS Top : -15.0 V -10.0 V -8.0 V -7 -6.0 V Bottom : -5 Drain-Source Voltage [V] DS Figure 1. ...

Page 4

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature Operation in This Area is Limited by R DS(on ※ ...

Page 5

-3mA -3mA Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & ...

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...

Page 7

Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. A2, January 2009 ...

Page 8

Mechanical Dimensions ©2009 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A2, January 2009 ...

Page 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current ...

Related keywords