Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 3) @T
Thermal Resistance, Junction to Ambient Air (Note 3) @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30526 Rev. 9 - 2
Epitaxial Die Construction
Complementary NPN Type Available (BC847BLP)
Ultra-Small Leadless Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN1006-3
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0009 grams
1.
2.
3.
4.
Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Characteristic (Note 4)
Characteristic
Characteristic
@T
A
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C
www.diodes.com
Symbol
1 of 3
V
V
V
V
V
V
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
BE(ON)
h
CBO
f
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
CBO
FE
T
Symbol
Symbol
BOTTOM VIEW
T
Please click here to visit our online spice models database.
V
V
V
j
R
, T
P
I
CBO
CEO
EBO
θJA
C
-600
D
Min
220
100
-50
-45
STG
—
—
—
—
—
—
—
-5
-250
-700
-850
-670
-710
Typ
260
-90
3.0
—
—
—
—
—
—
Max
-300
-650
-750
-820
DFN1006-3
475
-4.0
-55 to +150
-15
—
—
—
—
—
—
—
Value
Value
-100
-5.0
250
500
-50
-45
MHz
Unit
1
mV
mV
mV
nA
µA
pF
—
V
V
V
C
(Internal Schematic)
BC857BLP
TOP VIEW
Test Condition
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= 1μA, I
= 10μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
C
© Diodes Incorporated
B
°C/W
= 0
B
Unit
Unit
E
B
mW
mA
B
B
= 0
°C
C
C
C
A
C
= 0
V
V
V
B
B
= -0.5mA
= -0.5mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
= -5.0mA
= -5.0mA
BC857BLP
3
2
