NTB23N03RT4 ONSEMI [ON Semiconductor], NTB23N03RT4 Datasheet

NTB23N03RT4

Manufacturer Part Number

NTB23N03RT4

Description

Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.NTB23N03RT4.pdf (6 pages)

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Quantity

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Company:

H&T Electronics

Part Number:

NTB23N03RT4G

Quantity:

800

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NTB23N03R

Power MOSFET

23 Amps, 25 Volts

N−Channel D

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Typical Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

August, 2005 − Rev. 2

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ T

Operating and Storage Temperature Range

Thermal Resistance − Junction−to−Case

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Designed for low voltage, high speed switching applications in

High−Efficiency DC−DC Converters

Pb−Free Packages are Available

Planar HD3e Process for Fast Switching Performance

Low R

Low C

Low Gate Charge

Optimized for High Side Switching Requirements in

DS(on)

iss

to Minimize Driver Loss

to Minimize Conduction Loss

= 10 ms)

Parameter

= 25°C, Limited by Chip

= 25°C, Limited by Package

PAK

= 25°C unless otherwise specified)

= 25°C

Symbol

, T

DSS

qJC

stg

−55 to

Value

37.5

±20

150

260

6.0

3.3

°C/W

Unit

Vdc

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

CASE 418B

STYLE 2

23 AMPERES, 25 VOLTS

PAK

T23N03 = Specific Device Code

ORDERING INFORMATION

DS(on)

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−CHANNEL

= 32 mW (Typ)

& PIN ASSIGNMENTS

MARKING DIAGRAM

Gate

Publication Order Number:

T23

N03G

AYWW

4 Drain

Drain

NTB23N03R/D

Source

Related parts for NTB23N03RT4

NTB23N03RT4 Summary of contents

Page 1

NTB23N03R Power MOSFET 23 Amps, 25 Volts 2 N−Channel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Planar ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTB23N03R NTB23N03RG NTB23N03RT4 NTB23N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTB23N03R (T = 25°C unless otherwise specified 150° ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 0.16 0.12 0.08 T ...

Page 4

iss 300 C rss 200 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...

Page 5

−T− SEATING PLANE 0.13 (0.005) VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download ...

Page 6

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...

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