NTB60N06T4 ONSEMI [ON Semiconductor], NTB60N06T4 Datasheet

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NTB60N06T4

Manufacturer Part Number
NTB60N06T4
Description
60 V, 60 A, N-Channel TO-220 and D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NTB60N06T4.pdf (10 pages)

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NTP60N06, NTB60N06
Power MOSFET
60 V, 60 A, N−Channel
TO−220 and D
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using minimum recommended pad
MAXIMUM RATINGS
October, 2004 − Rev. 3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2004
size, (Cu Area 0.412 in
Derate above 25 C
Energy − Starting T
(V
I
Purposes, 1/8 from case for 10 seconds
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
= 75 Vdc, V
= 55 A, V
DS
Rating
GS
= 60 Vdc)
J
p
= 10 Vdc, L = 0.3 mH
(T
= 25 C
v10 ms)
2
2
A
A
p
).
J
PAK
GS
v10 ms)
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
= 10 MW)
= 25 C
= 25 C (Note 1)
Symbol
T
V
V
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
+175
"20
"30
42.3
62.5
180
150
454
260
1.0
2.4
1.0
60
60
60
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1
2
3
2
3
60 VOLTS, 60 AMPERES
NTx60N06
x
A
Y
WW
ORDERING INFORMATION
4
G
R
http://onsemi.com
4
DS(on)
CASE 221A
CASE 418B
STYLE 5
TO−220
N−Channel
STYLE 2
D
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
2
D
PAK
= 14 mW
Publication Order Number:
S
Gate
Gate
DIAGRAMS
1
MARKING
1
NTx60N06
NTx60N06
Drain
Drain
Drain
Drain
NTP60N06/D
AYWW
AYWW
4
4
2
2
3
Source
3
Source

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NTB60N06T4 Summary of contents

Page 1

NTP60N06, NTB60N06 Power MOSFET N−Channel 2 TO−220 and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb−Free Packages are Available Typical Applications ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

100 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.026 0.022 T ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE 100 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... ORDERING INFORMATION Device NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP60N06, NTB60N06 Package TO−220 TO−220 (Pb−Free PAK 2 D PAK (Pb− ...

Page 8

NTP60N06, NTB60N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING −T− 1. DIMENSIONING AND TOLERANCING PER ANSI PLANE Y14.5M, ...

Page 9

−T− SEATING PLANE 0.13 (0.005 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques ...

Page 10

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...

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