pbss305nz NXP Semiconductors, pbss305nz Datasheet

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pbss305nz

Manufacturer Part Number
pbss305nz
Description
Pbss305nz 80 V, 5.1 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
pbss305nzЈ¬135
Manufacturer:
NXP
Quantity:
4 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PZ.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS305NZ
80 V, 5.1 A NPN low V
Rev. 01 — 19 September 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
300 s;
0.02.
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 200 mA
= 4 A;
1 ms
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
40
Product data sheet
Max
80
5.1
10.2
56
Unit
V
A
A
m

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pbss305nz Summary of contents

Page 1

... PBSS305NZ 80 V, 5.1 A NPN low V Rev. 01 — 19 September 2006 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...

Page 2

... Ordering information Package Name Description SC-73 plastic surface-mounted package with increased heatsink; 4 leads Marking codes Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat Simplified outline Symbol Marking code S305NZ © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 3

... O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat Conditions Min Max open emitter - 80 open base - 80 open collector - 5 - 5.1 single pulse ...

Page 4

... Product data sheet Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat Min Typ [ [ [ 006aaa561 2 1 ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305NZ_1 Product data sheet Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat 006aaa562 006aaa563 © ...

Page 6

... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat Min Typ = [ ...

Page 7

... C Fig 6. Collector current as a function of 006aaa622 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V CEsat amb collector-emitter voltage; typical values 1 ...

Page 8

... Fig 10. Collector-emitter saturation voltage as a 006aaa626 10 R CEsat ( ) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V CEsat 1 1 (1) (2) ( amb /I = 100 ...

Page 9

... Fig 14. Test circuit for switching times PBSS305NZ_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Boff Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...

Page 10

... For further information and the availability of packing methods, see PBSS305NZ_1 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3.3 1 2.3 4.6 Dimensions in mm Packing methods Package Description SOT223 8 mm pitch tape and reel Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat 1.8 1.5 4 1.1 0 0.8 0.32 0.6 0.22 04-11-10 [1] Packing quantity 1000 -115 Section 14. © ...

Page 11

... Fig 16. Reflow soldering footprint Fig 17. Wave soldering footprint PBSS305NZ_1 Product data sheet 1. 7.40 1 solder lands occupied area solder paste solder resist 1 1. transport direction during soldering solder lands occupied area Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V CEsat 7.00 3.85 3.60 3.50 0.30 4 4.80 3. 5.90 6.15 Dimensions ...

Page 12

... Table 9. Revision history Document ID Release date PBSS305NZ_1 20060919 PBSS305NZ_1 Product data sheet 80 V, 5.1 A NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 19 September 2006 PBSS305NZ (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 19 September 2006 PBSS305NZ 80 V, 5.1 A NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 19 September 2006 Document identifier: PBSS305NZ_1 ...

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