pbss301px NXP Semiconductors, pbss301px Datasheet
pbss301px
Manufacturer Part Number
pbss301px
Description
Pbss301px 12 V, 5.3 A Pnp Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS301PX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS301PX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
pbss301px115
Manufacturer:
NXP Semiconductors
Quantity:
135
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NX.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS301PX
12 V, 5.3 A PNP low V
Rev. 01 — 21 August 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in a SOT89
300 s;
0.02.
FE
CEsat
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
C
= 200 mA
= 4 A;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
28
Product data sheet
Max
40
12
5.3
10.6
Unit
V
A
A
m
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