pbss302px

Manufacturer Part Numberpbss302px
DescriptionPbss302px 20 V, 5.1 A Pnp Low Vcesat Biss Transistor
ManufacturerNXP Semiconductors
pbss302px datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
Page 1/15

Download datasheet (133Kb)Embed
Next
PBSS302PX
20 V, 5.1 A PNP low V
Rev. 01 — 23 August 2006
1. Product profile
1.1 General description
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NX.
1.2 Features
I
Low collector-emitter saturation voltage V
I
High collector current capability I
I
High collector current gain (h
I
High efficiency due to less heat generation
I
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
DC-to-DC conversion
I
MOSFET gate driving
I
Motor control
I
Charging circuits
I
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol Parameter
V
CEO
I
C
I
CM
R
CEsat
[1]
Pulse test: t
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
CEsat
and I
C
) at high I
FE
Quick reference data
Conditions
collector-emitter voltage
open base
collector current
peak collector current
single pulse;
t
1 ms
p
collector-emitter
I
= 4 A;
C
saturation resistance
I
= 200 mA
B
300 s;
0.02.
p
(BISS) transistor
Product data sheet
CEsat
CM
C
Min
Typ
-
-
-
-
-
-
[1]
-
32
Max
Unit
20
V
5.1
A
10.2
A
48
m

pbss302px Summary of contents

  • Page 1

    ... PBSS302PX 20 V, 5.1 A PNP low V Rev. 01 — 23 August 2006 1. Product profile 1.1 General description PNP low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...

  • Page 2

    ... Package Name Description SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads Marking codes Marking code *5J Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat Simplified outline Symbol [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

  • Page 3

    ... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat Min Max - - - - - [ 0.6 [2] - 1.65 [3] - 2.1 - 150 65 +150 65 +150 006aaa556 75 125 ...

  • Page 4

    ... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302PX_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ ...

  • Page 5

    ... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302PX_1 Product data sheet Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat 006aaa558 006aaa559 © ...

  • Page 6

    ... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat Min Typ = [ ...

  • Page 7

    ... I (mA) C Fig 6. Collector current as a function of 006aaa597 V BEsat (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat ( (mA) = 100 amb collector-emitter voltage ...

  • Page 8

    ... I (2) I (3) I Fig 10. Collector-emitter saturation voltage as a 006aaa601 R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat 10 ( ( ...

  • Page 9

    ... Fig 14. Test circuit for switching times PBSS302PX_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope ...

  • Page 10

    ... For further information and the availability of packing methods, see PBSS302PX_1 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 15. ...

  • Page 11

    ... Dimensions in mm 6.60 2. 1.50 0.70 5.30 Dimensions in mm Not recommended for wave soldering Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) solder lands solder resist occupied area 3.50 7.60 0.50 1.20 3.00 transport direction during soldering © Koninklijke Philips Electronics N.V. 2006. All rights reserved. (BISS) transistor ...

  • Page 12

    ... PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint SOT89 (SC-62) Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 PCB thickness = 1.6 mm Fig 19. FR4 PCB, mounting pad for ...

  • Page 13

    ... Table 9. Revision history Document ID Release date PBSS302PX_1 20060823 PBSS302PX_1 Product data sheet 20 V, 5.1 A PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 23 August 2006 PBSS302PX (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

  • Page 14

    ... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 23 August 2006 PBSS302PX 20 V, 5.1 A PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

  • Page 15

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 23 August 2006 Document identifier: PBSS302PX_1 ...