pbss302px NXP Semiconductors, pbss302px Datasheet - Page 6

• Manufacturer Part Number: pbss302px
• Description: Pbss302px 20 V, 5.1 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
PBSS302PX_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 23 August 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.1 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A; I
= 5 V; I
= 20 V; I
= 20 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 40 mA
= 200 mA
= 40 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 255 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
20 V, 5.1 A PNP low V
= 0 A
= 0 A;
Boff
= i
= 0.1 A;
C
= 3 A;
e
= 0.15 A
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
250
250
200
150
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302PX
CEsat
Typ
-
-
-
370
340
290
220
160
32
50
10
55
65
205
145
350
130
130
25
45
70
90
130
120
200
160
0.82
0.93
0.76
(BISS) transistor
Max
-
-
-
-
-
48
75
-
-
-
-
-
-
-
160
100
50
100
35
65
100
130
190
175
300
230
0.9
1.05
0.85
6 of 15
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A