q67041-s4025 Infineon Technologies Corporation, q67041-s4025 Datasheet

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q67041-s4025

Manufacturer Part Number
q67041-s4025
Description
Sipmos Small-signal-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
SIPMOS
Features
Type
BSO 215 C
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t, T
I
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
D
S
S
Enhancement mode
A
A
A
A
Dual N- and P -Channel
Logic Level
Avalanche rated
d v /d t rated
= 3 A, V
= -2.7 A, V
= 3 A, V
= -3.7 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
DS
DD
Small-Signal-Transistor
DS
= 16 V, d i /d t = 200 A/µs
= 15 V, R
DD
Package
SO 8
= -16 V, d i /d t = -200 A/µs
= -15 V, R
jmax
GS
j
= 25 °C, unless otherwise specified
= 25
= 150 °C
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
Preliminary data
Ordering Code
Q67041-S4025
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
V
R
I
D
DS
DS(on)
14.8
±20
3.7
0.2
26
N
6
2
3
-
-
-55...+150
55/150/56
0.1
3.7
Value
20
N
-14.8
BSO 215 C
-3.7
±20
0.2
68
-3
P
6
2
-
-
1999-09-22
-3.7
-20
0.1
P
Unit
A
mJ
kV/µs
V
W
°C
V
A

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q67041-s4025 Summary of contents

Page 1

... Power dissipation °C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Product Summary Drain source voltage V Drain-Source on-state R resistance I Continuous drain current Ordering Code Q67041-S4025 Symbol puls jmax tot ...

Page 2

Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint sec cooling area ; t 10 sec. @ min. footprint sec. 2 ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance DS(on)max DS(on)max D Input capacitance V ...

Page 4

Electrical Characteristics Parameter Characteristics Gate to source charge Gate to drain charge ...

Page 5

Power Dissipation (N-Ch tot A BSO 215 C 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 Drain current (N-Ch ...

Page 6

Safe operating area (N-Ch parameter : °C A BSO 215 ...

Page 7

Typ. output characteristics (N-Ch parameter µs p BSO 215 2.00W tot 0.0 0.5 ...

Page 8

Typ. transfer characteristics (N-Ch.) parameter µ DS(on)max ...

Page 9

Drain-source on-resistance (N-Ch DS(on) j parameter : BSO 215 C 0.26 0.22 0.20 0.18 0.16 0.14 98% 0.12 0.10 0.08 typ 0.06 0.04 ...

Page 10

Typ. capacitances (N-Ch parameter MHz Forward characteristics of reverse diode (N-Ch.) F ...

Page 11

Avalanche Energy parameter 105 Typ. gate charge (N-Ch.) V ...

Page 12

Drain-source breakdown voltage (N-Ch.) j (BR)DSS BSO 215 C 24.5 V 23.5 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 -60 - 100 Preliminary data Drain-source breakdown voltage V ...

Page 13

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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