ktc9012

Manufacturer Part Numberktc9012
DescriptionEpitaxial Planar Pnp Transistor
ManufacturerKorea Electronics (KEC GROUP)
ktc9012 datasheet
 
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SEMICONDUCTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
Linearity.
FE
Complementary to KTC9013.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
Classification D:64 91, E:78 112, F:96 135, G:118 166, H:144 202, I:176 246
FE
1994. 5. 11
Revision No : 0
TECHNICAL DATA
SYMBOL
RATING
UNIT
V
-40
V
CBO
V
-30
V
CEO
V
-5
V
EBO
I
-500
mA
C
I
500
mA
E
P
625
mW
C
T
150
j
T
-55 150
stg
SYMBOL
TEST CONDITION
I
V
=-35V, I
=0
CBO
CB
E
I
V
=-5V, I
=0
EBO
EB
C
h
(Note)
V
=-1V, I
=-50mA
FE
CE
C
V
I
=-100mA, I
=-10mA
CE(sat)
C
B
V
I
=-100mA, V
=-1V
BE
C
CE
f
V
=-6V, I
=-20mA, f=100MHz
T
CB
C
C
V
=-6V, I
=0, f=1MHz
ob
CB
E
KTC9012
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
DIM
MILLIMETERS
N
A
4.70 MAX
E
K
B
4.80 MAX
G
C
3.70 MAX
D
D
E
F
G
H
J
14.00 0.50
H
K
0.55 MAX
F
F
L
M
0.45 MAX
N
3
1
2
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
MIN.
TYP.
MAX.
-
-
-0.1
-
-
-0.1
64
-
246
-
-0.1
-0.25
-0.8
-1.0
150
-
-
-
7.0
-
0.45
1.00
1.27
0.85
0.45
+ _
2.30
1.00
UNIT
A
A
V
V
MHz
pF
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