bb201m ETC-unknow, bb201m Datasheet

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bb201m

Manufacturer Part Number
bb201m
Description
Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
ETC-unknow
Datasheet
Features
Outline
Notes: 1. Marking is “AV–”.
Build in Biasing Circuit; To reduce useing parts cost & PC board space.
Low noise characteristics;
(NF = 2.0 dB typ. at f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditins.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
2. BB201M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
BB201M
ADE-208-713A (Z)
2nd. Edition
Dec. 1998

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bb201m Summary of contents

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... MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditins. Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline Notes: 1. Marking is “AV–”. 2. BB201M is individual type number of HITACHI BBFET. BB201M UHF RF Amplifier ADE-208-713A (Z) 2nd. Edition Dec. 1998 ...

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... BB201M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage V Gate2 to source breakdown voltage V ...

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... Main Characteristics BB201M 3 ...

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... BB201M Package Dimensions 10 Unit: mm ...

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... Hitachi product. 5. This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. BB201M 11 ...

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