mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet - Page 7

• Manufacturer Part Number: mw4ic2230n
• Description: Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
2
Figure 9. Output Power versus Input Power
4
P1dB = 45.3 dBm (34 W)
6
P3dB = 46.3 dBm (43 W)
8
P
V
I
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DQ1
in
DD
, INPUT POWER (dBm)
10
= 28 Vdc
= 60 mA, I
12
DQ2
14
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
= 350 mA, I
Figure 11. MTTF Factor versus Temperature Junction
16
90
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
18
100
DQ3
TYPICAL CHARACTERISTICS
1st Stage
Actual
20
Ideal
= 265 mA,
110
2nd Stage
T
22
J
, JUNCTION TEMPERATURE (°C)
D
2
120
for MTTF in a particular application.
24
3rd Stage
130
140
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1950
150
160
2000
Figure 10. Delay versus Frequency
170
2050
180
MW4IC2230NBR1 MW4IC2230GNBR1
2
f, FREQUENCY (MHz)
V
I
DQ1
DD
190
2100
= 28 Vdc, Small Signal
= 60 mA, I
2150
DQ2
= 350 mA, I
2200
DQ3
2250
= 265 mA
2300
7