2sa812-t1b ETC-unknow, 2sa812-t1b Datasheet
2sa812-t1b
Manufacturer Part Number
2sa812-t1b
Description
Silicon Transistor
Manufacturer
ETC-unknow
Datasheet
1.2SA812-T1B.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA812-T1B
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2SA812-T1B
Manufacturer:
RENESAS
Quantity:
12 060
Part Number:
2sa812-t1b-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
2sa812-t1b-A
Manufacturer:
RENESAS
Quantity:
10 695
Company:
Part Number:
2sa812-t1b-A (M6)
Manufacturer:
RENESAS
Quantity:
6 600
Company:
Part Number:
2sa812-t1b-A(M6)
Manufacturer:
RENESAS
Quantity:
6 600
Part Number:
2sa812-t1b-A-M6
Manufacturer:
NEC
Quantity:
20 000
Part Number:
2sa812-t1b/
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2sa812-t1b/JM
Manufacturer:
NEC
Quantity:
14 724
Part Number:
2sa812-t1b/M7
Manufacturer:
NEC
Quantity:
20 000
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
h
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
FE
CLASSIFICATION
Marking
1. Emitter
2. Base
3. Collector
CHARACTERISTIC
h
PACKAGE DRAWING
FE
1
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
(Unit: mm)
1.5 TYP.
2.8 ±0.2
90 to 180
M4
Marking
µ
s, Duty Cycle ≤ 2%
3
PNP SILICON EPITAXIAL TRANSISTOR
SYMBOL
0.65
V
I
I
V
h
CE(sat)
C
135 to 270
CBO
EBO
f
FE
BE
T
ob
+0.1
–0.15
M5
The mark
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: h
• High Voltage: V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
−0.58
MIN.
A
90
DATA SHEET
= 25°C)
200 to 400
MINI MOLD
shows major revised points.
M6
−0.18
−0.62
TYP.
200
180
4.5
CEO
300 to 600
= −50 V
MAX.
−0.68
−0.1
−0.1
−0.3
M7
600
FE
= 200 TYP. (V
UNIT
MHz
µ
µ
pF
V
V
SILICON TRANSISTOR
A
A
A
CE
V
V
V
I
V
V
V
V
V
V
I
P
T
T
C
= 25°C)
C
CB
EB
CE
CE
CE
CE
j
stg
CBO
CEO
EBO
T
= −100 mA, I
= −6.0 V, I
= −60 V, I
= −5.0 V, I
= −6.0 V, I
= 6.0 V, I
= −6.0 V, I
= −10 V, I
TEST CONDITIONS
c
−55 to +150
2SA812
C
−100
E
E
−5.0
C
−60
−50
200
150
C
C
E
= −1.0 mA
B
= 0 A
= 0 A, f = 1.0 MHz
= −1.0 mA) )
= 0 A
= 10 mA
= −1.0 mA
= −10 mA
Note
mW
mA
°C
°C
V
V
V
1984
Related parts for 2sa812-t1b
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
ETC-unknow
Datasheet:
Part Number:
Description:
Manufacturer:
ETC-unknow
Datasheet:
2sa812-t1b Summary of contents
Page 1
... BE 180 T 4 200 to 400 300 to 600 The mark shows major revised points. SILICON TRANSISTOR 2SA812 = −6 −1.0 mA 25°C) A − CBO − CEO −5 EBO −100 I mA ...
Page 2
... TYPICAL CHARACTERISTICS ( 25°C) I = 10 A • Data Sheet D17119EJ2V0DS 2SA812 ...
Page 3
... T = 75°C A 50°C 25°C 0°C −25°C µ s Data Sheet D17119EJ2V0DS 2SA812 µ ...
Page 4
... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA812 Not all M8E 02. 11-1 ...
Page 5
... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...