2PB709AS PHILIPS [NXP Semiconductors], 2PB709AS Datasheet - Page 3

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2PB709AS

Manufacturer Part Number
2PB709AS
Description
PNP general purpose transistor
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
c
PNP general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
2PB709AQ
2PB709AR
2PB709AS
2PB709AQ
2PB709AR
2PB709AS
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 100 mA; I
= i
= 1 mA; V
e
= 0; V
CB
CB
EB
3
= 45 V
= 45 V; T
= 5 V
CONDITIONS
CB
note 1
CE
CE
B
= 10 V; f = 1 MHz
= 10 V
= 10 V; f = 100 MHz
= 10 mA; note 1
CONDITIONS
j
= 150 C
160
210
290
60
70
80
MIN.
VALUE
500
Product specification
260
340
460
5
10
5
10
500
MAX.
2PB709A
UNIT
K/W
nA
nA
mV
pF
MHz
MHz
MHz
A
UNIT

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