2PB709ASW KEXIN [Guangdong Kexin Industrial Co.,Ltd], 2PB709ASW Datasheet

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2PB709ASW

Manufacturer Part Number
2PB709ASW
Description
PNP General Purpose Transistor
Manufacturer
KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2PB709ASW
Manufacturer:
NXP
Quantity:
24 000
SMD Type
SMD Type
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Collector cut-off current
Emitter cut-off current
DC current gain
2PB709AQW
2PB709ARW
2PB709ASW
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
2PB709AQW
2PB709ARW
2PB709ASW
* Pulse test: tp
Features
High collector current (max. 100 mA).
Low collector-emitter saturation voltage (max. 500 mV).
Absolute Maximum Ratings Ta = 25
h
Electrical Characteristics Ta = 25
FE
Marking
TYPE
Classification
Parameter
2PB709AQW
300 ìs; ä
Parameter
N5
0.02.
PNP General Purpose Transistor
2PB709ARW 2PB709ASW
N7
Symbol
V
2PB709AW
I
I
CE(sat)
h
CBO
EBO
Symbol
C
N9
f
FE
T
R
V
V
V
T
c
P
T
I
CBO
CEO
th j-a
EBO
I
CM
amb
T
stg
C
tot
j
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0; V
= 0; V
= ie = 0; V
= 0; V
= -2 mA; V
= -100 mA; I
= -1 mA; V
-65 to +150
-65 to +150
CB
CB
EB
Rating
= -45 V
= -45 V; T
= -5 V
-100
-200
200
150
625
-45
-45
CB
Testconditons
-6
CE
CE
B
= -10 V; f = 1 MHz
= -10 V
= -10 V;f = 100 MHz
= -10 mA; *
j
= 150
K/W
Unit
mW
mA
mA
V
V
V
Min
160
210
290
60
70
80
www.kexin.com.cn
Transistors
260
340
460
Typ
-500
Max
-10
-10
1 Emitter
2 Base
3 Collector
-5
5
IC
MHz
Unit
mV
nA
ìA
nA
pF
1

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