MSB1218ART1 MOTOROLA [Motorola, Inc], MSB1218ART1 Datasheet

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MSB1218ART1

Manufacturer Part Number
MSB1218ART1
Description
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MSB1218ART1.pdf (6 pages)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon General Purpose
Amplifier Transistor
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 s, D.C.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
MSB1218A–RT1 = BR
MSB1218A–ST1 = BS
Power Dissipation (1)
Junction Temperature
Storage Temperature Range
Collector–Emitter Breakdown Voltage (I C = 2.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage (I C = 10 Adc, I E = 0)
Emitter–Base Breakdown Voltage (I E = 10 Adc, I E = 0)
Collector–Base Cutoff Current (V CB = 20 Vdc, I E = 0)
Collector–Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)
DC Current Gain (2)
Collector–Emitter Saturation Voltage (2)
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
Motorola, Inc. 1996
High h FE , 210 – 460
Low V CE(sat) , < 0.5 V
Available in 8 mm, 7–inch/3000 Unit Tape and Reel
(V CE = 10 Vdc, I C = 2.0 mAdc)
(I C = 100 mAdc, I B = 10 mAdc)
Rating
Rating
(T A = 25 C)
Characteristic
2%.
V (BR)CBO
V (BR)CEO
V (BR)EBO
Symbol
Symbol
I C(P)
MSB1218A–RT1
MSB1218A–ST1
T stg
P D
T J
I C
– 55 ~ + 150
Value
Max
100
200
150
150
7.0
45
45
BASE
1
COLLECTOR
V (BR)CEO
V (BR)CBO
V (BR)EBO
mAdc
mAdc
Unit
Unit
V CE(sat)
Vdc
Vdc
Vdc
mW
Symbol
3
C
C
I CBO
I CEO
h FE1
EMITTER
2
MSB1218A-RT1
MSB1218A-ST1
Min
210
290
7.0
45
45
—
—
—
PURPOSE AMPLIFIER
CASE 419–02, STYLE 3
Motorola Preferred Devices
SURFACE MOUNT
PNP GENERAL
TRANSISTORS
SC–70/SOT–323
1
Max
100
340
460
0.1
0.5
by MSB1218A–RT1/D
—
—
—
Order this document
2
3
Unit
Vdc
Vdc
Vdc
Vdc
—
—
A
A
1

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MSB1218ART1 Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications. ...

Page 2

MSB1218A-RT1 MSB1218A-ST1 250 200 150 100 833 C – AMBIENT TEMPERATURE ( C) Figure 1. Derating Curve 1000 ...

Page 3

V EB (V) Figure 6. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data MSB1218A-RT1 MSB1218A-ST1 ...

Page 4

MSB1218A-RT1 MSB1218A-ST1 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection SC–70/SOT–323 POWER DISSIPATION ...

Page 5

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of ...

Page 6

MSB1218A-RT1 MSB1218A-ST1 0.05 (0.002) H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for ...

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