BU323Z_09 ONSEMI [ON Semiconductor], BU323Z_09 Datasheet

BU323Z_09

Manufacturer Part Number

BU323Z_09

Description

NPN Silicon Power Darlington

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.BU323Z_09.pdf (6 pages)

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BU323Z

NPN Silicon Power

Darlington

High Voltage Autoprotected

Darlington with a built−in active zener clamping circuit. This device is

specifically designed for unclamped, inductive applications such as

Electronic Ignition, Switching Regulators and Motor Control, and

exhibit the following main features:

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

October, 2009 − Rev. 14

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Emitter Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Derate above 25_C

Operating and Storage Junction Temperature

Range

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

The BU323Z is a planar, monolithic, high−voltage power

Integrated High−Voltage Active Clamp

Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Clamping Energy Capability 100% Tested in a Live

High DC Current Gain/Low Saturation Voltages

Design Guarantees Operation in SOA at All Times

Offered in Plastic SOT−93/TO−218 Type or

Pb−Free Packages are Available*

Over the −40°C to +125°C Temperature Range

Ignition Circuit

Specified Over Full Temperature Range

TO−220 Packages

Characteristic

Rating

− Continuous

− Peak

− Continuous

− Peak

= 25_C

Symbol

CEO

EBO

, T

qJC

stg

–65 to

+175

Max

350

150

260

6.0

3.0

6.0

1.0

W/_C

_C/W

Unit

Vdc

Adc

BU323Z

BU323ZG

10 AMPERE DARLINGTON

Device

360 − 450 VOLTS CLAMP,

BU323Z

ORDERING INFORMATION

AUTOPROTECTED

http://onsemi.com

BASE

150 WATTS

= Assembly Location

= Year

= Work Week

= Pb−Free Package

= Device Code

CASE 340D

COLLECTOR 2,4

STYLE 1

SOT−93

(Pb−Free)

Package

CLAMP

SOT−93

360 V

EMITTER 3

Publication Order Number:

30 Units / Rail

MARKING

DIAGRAM

Shipping

BU323ZG

BU323Z/D

AYWW

Related parts for BU323Z_09

BU323Z_09 Summary of contents

Page 1

BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...

Page 3

6.5 A NOM Output transistor turns on: I High Voltage Circuit turns on 100 μA Avalanche diode turns on 250 V 300 V Icer Leakage Current Figure 1. ...

Page 4

CPEAK ( CPEAK ( CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under ...

Page 5

T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...

Page 6

Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no ...

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