PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet
PF38F5070M0Q0B0
Manufacturer Part Number
PF38F5070M0Q0B0
Description
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.PF38F5070M0Q0B0.pdf
(139 pages)
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Numonyx™ StrataFlash
(M18)
Product Features
High-Performance Read, Program and Erase
— 96 ns initial read access
— 108 MHz with zero wait-state synchronous
— 133 MHz with zero wait-state synchronous
— 8-, 16-, and continuous-word
— Programmable WAIT configuration
— Customer-configurable output driver
— Buffered Programming:
— 20 µs (typ) program/erase suspend
Architecture
— 16-bit wide data bus
— Multi-Level Cell Technology
— Symmetrically-Blocked Array Architecture
— 256-Kbyte Erase Blocks
— 1-Gbit device: Eight 128-Mbit partitions
— 512-Mbit device: Eight 64-Mbit partitions
— 256-Mbit device: Eight 32-Mbit partitions.
— 128-Mbit device: Eight 16-Mbit partitions.
— Read-While-Program and Read-While-Erase
— Status Register for partition/device status
— Blank Check feature
Quality and Reliability
— Expanded temperature: –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ X Process Technology (65 nm)
— ETOX™ IX Process Technology (90 nm)
burst reads: 7 ns clock-to-data output
burst reads: 5.5 ns clock-to-data output
synchronous-burst Reads
impedance
2.0 µs/Word (typ), 512-Mbit 65 nm;
Block Erase: 0.9 s per block (typ)
®
Power
— Core voltage: 1.7 V - 2.0 V
— I/O voltage: 1.7 V - 2.0 V
— Standby current: 60 µA (typ) for 512-Mbit,
— Deep Power-Down mode: 2 µA (typ)
— Automatic Power Savings mode
— 16-word synchronous-burst read current:
Software
— Numonyx™ Flash Data Integrator
— Basic Command Set and Extended
— Common Flash Interface
Security
— OTP Registers:
— Absolute write protection with V
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Density and Packaging
— Density: 128-, 256-, and 512-Mbit, and 1-
— Address-data multiplexed and non-
— x16D (105-ball) Flash SCSP
— x16C (107-ball) Flash SCSP
— 0.8 mm pitch lead-free solder-ball
Cellular Memory
65 nm
23 mA (typ) @ 108 MHz; 24 mA (typ) @
133 MHz
(Numonyx™ FDI) optimized
Command Set compatible
64 unique pre-programmed bits
2112 user-programmable bits
Gbit
multiplexed interfaces
Order Number: 309823-11
Datasheet
PP
= GND
April 2008
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