U440_TO-71 MICROSS [Micross Components], U440_TO-71 Datasheet
U440_TO-71
Manufacturer Part Number
U440_TO-71
Description
a tightly matched Monolithic Dual N-Channel JFET
Manufacturer
MICROSS [Micross Components]
Datasheet
1.U440_TO-71.pdf
(1 pages)
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
∆|V
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
The U440 are monolithic dual JFETs mounted in a
single TO-71 package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The U440 is a
direct replacement for discontinued Siliconix U440.
The hermetically sealed TO-71 is well suited for military
applications.
U440 Applications:
Available Packages:
U440 in TO-71
U440 available as bare die
Please contact Micross for full package and die dimensions:
Email:
Web:
(See Packaging Information).
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Linear Systems replaces discontinued Siliconix U440
Gate to Source Breakdown Voltage
Gate to Source Saturation Current
Equivalent Input Noise Voltage
.
Gate to Source Cutoff Voltage
The U440 is a tightly matched Monolithic Dual N-Channel JFET
Reverse Transfer Capacitance
Forward Transconductance
Gate Operating Current
Gate Leakage Current
CHARACTERISTIC
Differential Gate to Source Cutoff Voltage
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio
Common Mode Rejection Ratio
Output Conductance
CHARACTERISTICS
Input Capacitance
3
2
MONOLITHIC DUAL
MIN.
N-CHANNEL JFET
‐25
4.5
‐1
6
FEATURES
Direct Replacement for SILICONIX U440
HIGH CMRR
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
U440
TYP.
‐3.5
15
70
‐1
‐1
6
3
1
4
MIN
MAX.
‐500
‐500
200
30
‐6
9
0.07
0.97
TYP
20
85
nV/√Hz
UNITS
mA
mS
pA
pA
µS
pF
pF
V
V
1
MAX
10
TO-71 (Top View)
UNITS
µV/°C
mV
dB
%
%
V
V
V
DS
DS
DS
= 10V, I
= 10V, I
= 10V, I
V
V
V
V
I
G
GS
DG
DS
DS
= ‐1µA, V
CONDITIONS
CONDITIONS
V
V
T
V
V
V
= ‐15V, V
= 10V, V
= 10V, I
= 10V, I
A
CMRR ≥ 85dB
DG
DG
DS
DS
DG
= ‐55°C to +125°C
D
D
I
= 10V, V
= 10V, I
D
= 10V, I
= 10V, I
= 5 to 10V, I
GSS
= 5mA, f = 10kHz
= 5mA, f = 1MHz
= 5mA, f = 1kHz
≤ 1 pA
‐65°C to +150°C
‐55°C to +135°C
D
D
DS
GS
DS
= 5mA
= 1nA
= 0V
500mW
D
= 0V
D
D
= 0V
GS
50mA
= 5mA, f = 1kHz
±50V
‐25V
‐25V
= 5mA
= 5mA
= 0V
D
= 5mA