S29GL032A10BAIR12 SPANSION [SPANSION], S29GL032A10BAIR12 Datasheet - Page 82

• Manufacturer Part Number: S29GL032A10BAIR12
• Description: 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
• Manufacturer: SPANSION [SPANSION]

Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V
2. Under worst case conditions of 90
3. Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
4. Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
80
Parameter
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time (Notes 3, 5)
Total Accelerated Effective Write Buffer Program Time
(Notes 4, 5)
Chip Program Time
data pattern.
operation.
Tables 25 and 26 for further information on command definitions.
°
C; Worst case V
S29GLxxxA MirrorBit™ Flash Family
S29GL032A
S29GL064A
S29GL032A
S29GL064A
A d v a n c e
CC
, 100,000 cycles.
Typ (Note 1)
31.5
240
200
0.5
I n f o r m a t i o n
32
64
63
(Note 2)
CC
Max
128
3.5
64
= 3.0V, 10,000 cycles; checkerboard
Unit
sec
sec
S29GLxxxA_00_A2 January 28, 2005
µs
µs
Excludes system
prior to erasure
level overhead
programming
Excludes 00h
Comments
(Note 6)
(Note 7)