MC68HC711PH8 Motorola, MC68HC711PH8 Datasheet - Page 74

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MC68HC711PH8

Manufacturer Part Number
MC68HC711PH8
Description
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
Manufacturer
Motorola
Datasheet
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08/Apr/97@13:55 [DS97 v 4.1]
3.4.2.3
The following example shows how to perform a fast erase of 16 bytes of EEPROM:
ROWE
3.4.2.4
The following is an example of how to erase a single byte of EEPROM:
BYTEE LDAB
MOTOROLA
3-28
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
STAB
STAB
LDAB
STAB
JSR
CLR
EEPROM row erase
EEPROM byte erase
#$0E
$003B Set to ROW erase mode
0,X
#$0F
$003B Turn on high voltage
DLY10 Delay tEEPROG
$003B Turn off high voltage and set to READ mode
#$16
$003B Set to BYTE erase mode
0,X
#$17
$003B Turn on high voltage
DLY10 Delay tEEPROG
$003B Turn off high voltage and set to READ mode
OPERATING MODES AND ON-CHIP MEMORY
ROW=ERASE=EELAT=1
Write any data to any address in ROW
ROW=ERASE=EELAT=EEPGM=1
BYTE=ERASE=EELAT=1
Write any data to address to be erased
BYTE=ERASE=EELAT=EEPGM=1
—this line does not form part of the document—
PH8.DS03/Modes+mem
MC68HC11PH8
TPG

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