MC68HC711xxxx Motorola, MC68HC711xxxx Datasheet - Page 60

no-image

MC68HC711xxxx

Manufacturer Part Number
MC68HC711xxxx
Description
Microcontrollers
Manufacturer
Motorola
Datasheet
Operating Modes and On-Chip Memory
2.5.1.3 EEPROM Bulk Erase
2.5.1.4 EEPROM Row Erase
Data Sheet
60
EPGM — EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
During EEPROM programming, the ROW and BYTE bits of PPROG are not used.
If the frequency of the E clock is 1 MHz or less, set the CSEL bit in the OPTION
register. Recall that 0s must be erased by a separate erase operation before
programming. The following examples of how to program an EEPROM byte
assume that the appropriate bits in BPROT are cleared.
This is an example of how to bulk erase the entire EEPROM. The CONFIG register
is not affected in this example.
This example shows how to perform a fast erase of large sections of EEPROM.
PROG
BULKE
ROWE
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
Operating Modes and On-Chip Memory
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
M68HC11E Family — Rev. 5
MOTOROLA

Related parts for MC68HC711xxxx