UPC1679G-E1 NEC [NEC], UPC1679G-E1 Datasheet

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UPC1679G-E1

Manufacturer Part Number
UPC1679G-E1
Description
5 V-BIAS, +5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER
Manufacturer
NEC [NEC]
Datasheet
1.UPC1679G-E1.pdf (12 pages)
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
Printed in Japan
DESCRIPTION
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Saturated output power
• Wideband response
• Isolation
• Power Gain
ORDERING INFORMATION
PC1679G-E1
PC1679G-E2
The
This IC is manufactured using NEC’s 20 GHz f
Remark
Part Number
PC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: PC1679G)
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
8-pin plastic SOP (225 mil)
Package
: V
: P
: f
: ISL = 34 dB TYP. @ f = 500 MHz
: G
BIPOLAR ANALOG INTEGRATED CIRCUIT
The mark
u
CC
O(sat)
Caution Electro-static sensitive devices.
P
= 1.8 GHz TYP. @ 3 dB bandwidth
= 21.5 dB TYP. @ f = 500 MHz
= 4.5 to 5.5 V
Si MMIC AMPLIFIER
= +15.5 dBm TYP. @ f = 500 MHz with external inductor
DATA SHEET
DATA SHEET
shows major revision points.
T
NESAT
Marking
1679
TM
IV silicon bipolar process. This process uses silicon
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
Supplying Form
PC1679G
©
1994, 1999

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UPC1679G-E1 Summary of contents

Page 1

V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND DESCRIPTION The PC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is ...

Page 2

EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V CC Input Power P in Power Dissipation P D Operating Ambient Temperature T A Storage Temperature T stg RECOMMENDED OPERATING RANGE Parameter Symbol Supply Voltage V ...

Page 3

TEST CIRCUIT 800 pF INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 30 mA, to output medium power. To supply current for output transistor, connect an inductor between the ...

Page 4

TYPICAL CHARACTERISTICS (Unless otherwise specified, T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 60 No Signal Supply Voltage V NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY ...

Page 5

OUTPUT POWER vs. INPUT POWER + 500 MHz + –20 –15 –10 – Input Power P (dBm) ...

Page 6

S-PARAMETER (T = +25° -FREQUENCY 11 S -FREQUENCY 22 2 5.0 V) out 3.0 G 1.0 G 0.1 G 2.0 G 3.0 G 0.1 G 0.5 G 1.0 G Data Sheet ...

Page 7

TYPICAL S-PARAMETER VALUES PC1679G 5 out CC FREQUENCY S 11 MHz MAG. ANG. 100.0000 0.133 177.2 11.167 200.0000 0.154 171.2 11.585 300.0000 0.184 159.6 12.121 400.0000 0.217 147.3 12.690 500.0000 ...

Page 8

PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (Unit: mm NOTE Each lead centerline is located within 0. its true position (T.P.) at maximum material condition detail of ...

Page 9

NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

Page 10

Data Sheet P12434EJ4V0DS00 PC1679G ...

Page 11

Data Sheet P12434EJ4V0DS00 PC1679G 11 ...

Page 12

NESAT (NEC Silicon Advanced Technology trademark of NEC Corporation. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may ...

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