UPC2762TB_1 NEC [NEC], UPC2762TB_1 Datasheet
UPC2762TB_1
Manufacturer Part Number
UPC2762TB_1
Description
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
Manufacturer
NEC [NEC]
Datasheet
1.UPC2762TB_1.pdf
(28 pages)
Document No. P12710EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
Printed in Japan
DESCRIPTION
mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile
communications system.
silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Medium output power
• Power gain
• Upper limit operating frequency
• High-density surface mounting
APPLICATIONS
• Buffer amplifiers for mobile telephones :
• PA driver for PDC800M
ORDERING INFORMATION
The PC2762TB, PC2763TB and PC2771TB are silicon monolithic integrated circuits designed as amplifier for
These IC is manufactured using NEC’s 20 GHz f
Remark To order evaluation samples, please contact your local NEC sales office.
PC2762TB-E3
PC2763TB-E3
PC2771TB-E3
Part Number
Part number for sample order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
3 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
6-pin super minimold
PC2762TB, PC2763TB, PC2771TB
FOR MOBILE COMMUNICATIONS
BIPOLAR ANALOG INTEGRATED CIRCUITS
Package
Caution Electro-static sensitive devices
: V
:
:
:
: 6-pin super minimold package (2.0
The mark
PC2762TB; P
PC2763TB; P
PC2771TB; P
PC2762TB; G
PC2763TB; G
PC2771TB; G
PC2762TB; f
PC2763TB; f
PC2771TB; f
CC
:
DATA SHEET
= 2.7 to 3.3 V
PC2762TB, PC2763TB
PC2771TB
PC2762TB, PB2763TB, PC2771TB
Marking
shows major revised points.
C2A
C2H
C1Z
T
u
u
u
O(1 dB)
O(1 dB)
O(1 dB)
P
P
P
NESAT™III silicon bipolar process. This process uses direct
= 2.9 GHz TYP. @ 3dB Bandwidth
= 2.7 GHz TYP. @ 3dB Bandwidth
= 2.2 GHz TYP. @ 3dB Bandwidth
= 13 dB TYP. @ f = 0.9 GHz
= 20 dB TYP. @ f = 0.9 GHz
= 21 dB TYP. @ f = 0.9 GHz
= +8.0 dBm TYP. @ f = 0.9 GHz
= +9.5 dBm TYP. @ f = 0.9 GHz
= +11.5 dBm TYP. @ f = 0.9 GHz
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
1.25
Supplying Form
0.9 mm)
©
1997, 2001
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