UPC2776TB_1 NEC [NEC], UPC2776TB_1 Datasheet

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UPC2776TB_1

Manufacturer Part Number
UPC2776TB_1
Description
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
Manufacturer
NEC [NEC]
Datasheet
1.UPC2776TB_1.pdf (16 pages)
Document No. P12680EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
Printed in Japan
DESCRIPTION
impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Circuit current
• Power gain
• Medium output power
• Upper limit operating frequency : f
• Port impedance
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
µ PC2776TB-E3
The µ PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has
This IC is manufactured using NEC’s 20 GHz f
Remark To order evaluation samples, please contact your local NEC sales office.
Part Number
Part number for sample order: µ PC2776TB
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
6-pin super minimold
Package
BIPOLAR ANALOG INTEGRATED CIRCUIT
: I
: P
: V
: G
: input/output 50 Ω
Caution Electro-static sensitive devices
CC
u
CC
O(1 dB)
P
= 2.7 GHz TYP. @3 dB bandwidth
The mark
= 23 dB TYP. @f = 1 GHz
= 25 mA TYP. @V
= 4.5 to 5.5 V
DATA SHEET
= +6.5 dBm @f = 1 GHz
Marking
T
C2L
shows major revised points.
NESAT™ III silicon bipolar process. This process uses silicon
CC
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of the tape
• Qty 3 kpcs/reel
= 5.0 V
µ µ µ µ PC2776TB
Supplying Form
©
1997, 2001

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UPC2776TB_1 Summary of contents

Page 1

V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µ PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω band, so this IC suits to the ...

Page 2

PIN CONNECTIONS (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° 5 out ...

Page 3

PIN EXPLANATION Pin Pin Applied Voltage Pin Name No. Voltage (V) (V) 1 INPUT – 1.03 2 GND 0 – OUTPUT Voltage – as same through external inductor 6 V 4.5 to 5.5 – ...

Page 4

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V CC Circuit Current I CC Power Dissipation P D Operating Ambient Temperature T A Storage Temperature T stg Input Power P in RECOMMENDED OPERATING RANGE Parameter Symbol Supply Voltage V CC ELECTRICAL ...

Page 5

TEST CIRCUIT 50 Ω 000 pF COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value Bias Tee 1 000 Capacitor 1 000 Bias Tee 1 000 ...

Page 6

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Top View → Mounting direction COMPONENT LIST Value C 1 000 pF L 300 nH For more information on the use of this IC, refer to the following application note: USAGE ...

Page 7

TYPICAL CHARACTERISTICS (Unless otherwise specified, T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No Signal Supply Voltage V CC NOISE FIGURE, POWER GAIN vs. FREQUENCY ...

Page 8

OUTPUT POWER vs. INPUT POWER + 1.0 GHz + 5 4 –5 –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 Input Power P (dBm) in OUTPUT ...

Page 9

C, V S-PARAMETERS ( FREQUENCY FREQUENCY 5.0 V) out 0.1 G 1.0 G 3.0 G 2.0 G 3.0 G 1.0 G 0.1 G 2.0 ...

Page 10

TYPICAL S-PARAMETER VALUES ( 5 out CC FREQUENCY S 11 MHz MAG. ANG. 100.0000 0.226 2.8 200.0000 0.240 6.4 300.0000 0.254 10.4 400.0000 0.267 11.4 500.0000 0.285 11.1 600.0000 0.308 ...

Page 11

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet P12680EJ3V0DS µ µ µ µ PC2776TB 11 ...

Page 12

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

Page 13

Data Sheet P12680EJ3V0DS µ µ µ µ PC2776TB 13 ...

Page 14

Data Sheet P12680EJ3V0DS µ µ µ µ PC2776TB ...

Page 15

Data Sheet P12680EJ3V0DS µ µ µ µ PC2776TB 15 ...

Page 16

NESAT (NEC Silicon Advanced Technology trademark of NEC Corporation. • The information in this document is current as of February, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of ...

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