UPC3232TB-E3

Manufacturer Part NumberUPC3232TB-E3
Description5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
ManufacturerCEL [California Eastern Labs]
UPC3232TB-E3 datasheet
 


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5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
µ
The
PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz f
FEATURES
• Low current
: I
• Medium output power
: P
: P
• High linearity
: P
: P
• Power gain
: G
: G
• Gain flatness
:
• Noise figure
: NF = 4 dB TYP. @ f = 1.0 GHz
: NF = 4.1 dB TYP. @ f = 2.2 GHz
• Supply voltage
: V
: input/output 50 Ω
• Port impedance
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
µ
µ
PC3232TB-E3
PC3232TB-E3-A 6-pin super minimold
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
BIPOLAR ANALOG INTEGRATED CIRCUIT
UHS2 (Ultra High Speed Process) SiGe bipolar process.
max
= 26.0 mA TYP.
CC
= +15.5 dBm TYP. @ f = 1.0 GHz
O (sat)
= +12.0 dBm TYP. @ f = 2.2 GHz
O (sat)
= +11.0 dBm TYP. @ f = 1.0 GHz
O (1 dB)
= +8.5 dBm TYP. @ f = 2.2 GHz
O (1 dB)
= 32.8 dB MIN. @ f = 1.0 GHz
P
= 33.5 dB MIN. @ f = 2.2 GHz
P
G
= 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
P
= 4.5 to 5.5 V
CC
Package
Marking
• Embossed tape 8 mm wide
C3S
• Pin 1, 2, 3 face the perforation side of the tape
(Pb-Free)
• Qty 3 kpcs/reel
µ
PC3232TB
µ
PC3232TB
Supplying Form

UPC3232TB-E3 Summary of contents

  • Page 1

    V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION µ The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz f FEATURES • Low ...

  • Page 2

    PIN CONNECTIONS (Top View) (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° GHz out P ...

  • Page 3

    ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

  • Page 4

    ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Power Gain 5 G Power Gain 6 G ∆ Gain Flatness K factor ...

  • Page 5

    TEST CIRCUIT C4 1 000 pF C1 100 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type R1 ...

  • Page 6

    ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1 COMPONENT LIST Value Size 560 Ω R1 1005 1005 1005 C1 100 pF 1608 1608 C3 000 pF 1005 ...

  • Page 7

    TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 No Input Signal +85˚ –40˚ Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY 40 V ...

  • Page 8

    OUTPUT POWER vs. INPUT POWER 5 1.0 GHz 4 –5 –10 –15 –20 –50 –40 –30 –20 Input Power P (dBm) in NOISE FIGURE vs. FREQUENCY 7.0 6.5 ...

  • Page 9

    OUTPUT POWER, IM vs. INPUT POWER 000 MHz 001 MHz P out 10 0 –10 –20 – –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 ...

  • Page 10

    S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100.000 000 MHz −FREQUENCY S 22 START : 100.000 000 MHz 10 = −35 dBm 5 81.254 Ω 4 ...

  • Page 11

    S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet ...

  • Page 12

    PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 12 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10597EJ01V0DS µ PC3232TB ...

  • Page 13

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

  • Page 14

    Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...