UPC3232TB-E3 CEL [California Eastern Labs], UPC3232TB-E3 Datasheet

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UPC3232TB-E3

Manufacturer Part Number
UPC3232TB-E3
Description
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
Manufacturer
CEL [California Eastern Labs]
Datasheet

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Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
DESCRIPTION
This IC is manufactured using our 50 GHz f
FEATURES
• Low current
• Medium output power
• High linearity
• Power gain
• Gain flatness
• Noise figure
• Supply voltage
• Port impedance
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
µ
PC3232TB-E3
The
Remark
Part Number
µ
PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3232TB-E3-A 6-pin super minimold
Order Number
MEDIUM OUTPUT POWER AMPLIFIER
: I
: P
: P
: P
: P
: G
: G
:
: NF = 4 dB TYP. @ f = 1.0 GHz
: NF = 4.1 dB TYP. @ f = 2.2 GHz
: V
: input/output 50 Ω
5 V, SILICON GERMANIUM MMIC
(Pb-Free)
CC
G
O (sat)
O (sat)
O (1 dB)
O (1 dB)
CC
P
P
P
= 26.0 mA TYP.
= 32.8 dB MIN. @ f = 1.0 GHz
= 33.5 dB MIN. @ f = 2.2 GHz
= 4.5 to 5.5 V
= 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
BIPOLAR ANALOG INTEGRATED CIRCUIT
Package
= +15.5 dBm TYP. @ f = 1.0 GHz
= +12.0 dBm TYP. @ f = 2.2 GHz
max
= +11.0 dBm TYP. @ f = 1.0 GHz
= +8.5 dBm TYP. @ f = 2.2 GHz
µ
PC3232TB
UHS2 (Ultra High Speed Process) SiGe bipolar process.
Marking
C3S
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
µ
Supplying Form
PC3232TB

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UPC3232TB-E3 Summary of contents

Page 1

V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION µ The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz f FEATURES • Low ...

Page 2

PIN CONNECTIONS (Top View) (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° GHz out P ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

Page 4

ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Power Gain 5 G Power Gain 6 G ∆ Gain Flatness K factor ...

Page 5

TEST CIRCUIT C4 1 000 pF C1 100 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type R1 ...

Page 6

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1 COMPONENT LIST Value Size 560 Ω R1 1005 1005 1005 C1 100 pF 1608 1608 C3 000 pF 1005 ...

Page 7

TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 No Input Signal +85˚ –40˚ Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY 40 V ...

Page 8

OUTPUT POWER vs. INPUT POWER 5 1.0 GHz 4 –5 –10 –15 –20 –50 –40 –30 –20 Input Power P (dBm) in NOISE FIGURE vs. FREQUENCY 7.0 6.5 ...

Page 9

OUTPUT POWER, IM vs. INPUT POWER 000 MHz 001 MHz P out 10 0 –10 –20 – –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 ...

Page 10

S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100.000 000 MHz −FREQUENCY S 22 START : 100.000 000 MHz 10 = −35 dBm 5 81.254 Ω 4 ...

Page 11

S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet ...

Page 12

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 12 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10597EJ01V0DS µ PC3232TB ...

Page 13

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 14

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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