M29DW128F60NF1E

Manufacturer Part NumberM29DW128F60NF1E
Description128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
ManufacturerSTMICROELECTRONICS [STMicroelectronics]
M29DW128F60NF1E datasheet
 


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128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
Feature summary
Supply voltage
– V
= 2.7V to 3.6V for Program, Erase and
CC
Read
– V
=12V for Fast Program (optional)
PP
Asynchronous Random/Page Read
– Page width: 8 Words
– Page access: 25, 30ns
– Random access: 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
Erase Verify
Memory blocks
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
Dual Operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
October 2006
M29DW128F
3V supply Flash memory
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
Low power consumption
– Standby and Automatic Standby
Hardware Block Protection
– V
/WP Pin for fast program and write
PP
protect of the four outermost parameter
blocks
Security features
– Standard Protection
– Password Protection
Extended Memory Block
– Extra block used as security block or to
store additional information
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
®
ECOPACK
packages available
Rev 7
1/94
www.st.com
1

M29DW128F60NF1E Summary of contents

  • Page 1

    Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) Feature summary Supply voltage – 2.7V to 3.6V for Program, Erase and CC Read – V =12V for Fast Program (optional) PP Asynchronous Random/Page Read – ...

  • Page 2

    Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    M29DW128F 4.2 Temporary Block Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 4

    Contents 6.3.2 6.3.3 6.3.4 6.3.5 6.3.6 6.3.7 6.3.8 6.3.9 6.3.10 6.3.11 6.3.12 6.3.13 6.3.14 6.3.15 6.3.16 6.3.17 6.3.18 6.3.19 7 Status Register . . . . . . . . . . . . . . . . . . ...

  • Page 5

    M29DW128F Appendix A Block addresses and Read/Modify Protection Groups . . . . . . . . . 69 Appendix B Common Flash Interface (CFI ...

  • Page 6

    List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 7

    M29DW128F List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 8

    Summary description 1 Summary description The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At ...

  • Page 9

    M29DW128F Table 1. Signal names A0-A22 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE / The x8 organization is only available in TSOP56 Package while the x16 organization is available for ...

  • Page 10

    Summary description Table 2. Bank architecture Bank Bank size A 16 Mbit B 48 Mbit C 48 Mbit D 16 Mbit Figure 2. TSOP connections V PP /WP 10/94 Parameter Blocks No. of Block size Blocks 8 8 Kbytes/ 4 ...

  • Page 11

    M29DW128F Figure 3. TBGA connections (top view through package ...

  • Page 12

    Summary description Figure 4. Block Addresses (x8) 000000h 8 KBytes 001FFFh 00E000h 8 KBytes 00FFFFh Bank A 010000h 64 KBytes 01FFFFh 1F0000h 64 KBytes 1FFFFFh 200000h 64 KBytes 20FFFFh Bank B 7F0000h 64 KBytes 7FFFFFh 1. Also see Appendix A ...

  • Page 13

    M29DW128F Figure 5. Block Addresses (x16) 000000h 4 KWords 000FFFh 007000h 4 KWords 007FFFh Bank A 008000h 32 KWords 00FFFFh 0F8000h 32 KWords 0FFFFFh 100000h 32 KWord 107FFFh Bank B 3F8000h 32 KWords 3FFFFFh 1. Also see Appendix A, Table ...

  • Page 14

    Signal descriptions 2 Signal descriptions See Figure 1: Logic connected to this device. 2.1 Address Inputs (A0-A22) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the ...

  • Page 15

    M29DW128F 2.7 Write Enable (W) The Write Enable pin, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 V Write Protect (V PP/ The V /Write Protect pin provides two functions. The V PP use an external ...

  • Page 16

    Signal descriptions 2.9 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all the blocks previously protected using a High Voltage Block Protection technique (In-System ...

  • Page 17

    M29DW128F 2.12 V supply voltage (2.7V to 3.6V provides the power supply for all operations (Read, Program and Erase). CC The Command Interface is disabled when the V Voltage This prevents Bus Write operations from accidentally ...

  • Page 18

    Bus operations 3 Bus operations There are five standard bus operations that control the device. These are Bus Read (Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby. Dual operations are possible in the M29DW128F, thanks to ...

  • Page 19

    M29DW128F 3.5 Automatic Standby If CMOS levels (V more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, I Read operation is in progress. 3.6 Special Bus operations Additional bus operations can ...

  • Page 20

    Bus operations 3.6.5 Temporary Unprotect of high voltage Protected Blocks The RP pin can be used to temporarily unprotect all the blocks previously protected using the In-System or the Programmer protection technique (High Voltage techniques). Refer to Temporary Unprotect (RP). ...

  • Page 21

    M29DW128F Table 6. Bus operations, 16-bit mode Operation E G Bus Read Bus Write Output Disable Standby ...

  • Page 22

    Hardware Protection 4 Hardware Protection The M29DW128F features hardware protection/unprotection. Refer to block protection/unprotection using V 4.1 Write Protect The V /WP pin protects the four outermost parameter blocks (refer detailed description of the signals). 4.2 Temporary ...

  • Page 23

    M29DW128F 5 Software Protection The M29DW128F has two different Software Protection modes: the Standard Protection mode and the Password Protection mode. On first use all parts default to the Standard Protection mode and the customer is free to activate the ...

  • Page 24

    Software Protection 5.1.2 Non-Volatile Protection A Non-Volatile Modify Protection bit is assigned to each block or group of blocks. When a Non-Volatile Modify Protection bit is set to ‘1’ the associated block or group of blocks is protected, preventing any ...

  • Page 25

    M29DW128F 5.2.1 Block Lock/Unlock Protection The Block Lock/Unlock Protection operates exactly in the same way as in the Standard Protection mode. 5.2.2 Non-Volatile Protection The Non-Volatile Protection is more advanced in the Password Protection mode. In this mode, the Lock-Down ...

  • Page 26

    Software Protection Figure 6. Block Protection State diagram Set Standard Protection Standard Protection Figure 7. Software Protection scheme Parameter Block Main Blocks Block Lock/Unlock Protection Non-Volatile Protection 26/94 Default: Standard Protection Mode Non-Volatile Modify Lock Bit ...

  • Page 27

    M29DW128F 6 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in ...

  • Page 28

    Command interface 6.1.3 Read CFI Query command The Read CFI Query Command is used to put the addressed bank in Read CFI Query mode. Once in Read CFI Query mode Bus Read operations to the same bank will output data ...

  • Page 29

    M29DW128F operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read mode, unless an error has ...

  • Page 30

    Command interface 6.1.6 Block Erase command The Block Erase command can be used to erase a list of one or more blocks in one or more Banks. It sets all of the bits in the unprotected selected blocks to ’1’. ...

  • Page 31

    M29DW128F It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will ...

  • Page 32

    Command interface 6.1.11 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final Write operation latches the address and ...

  • Page 33

    M29DW128F Table 11. Standard Commands, 8-bit mode Command Read/Reset Manufacturer Code Device Code Auto Extended Block Protection Select Indicator Block Protection Status Program Blank Verify Command Verify Chip Erase Block Erase Erase/Program Suspend Erase/Program Resume Read CFI Query 1. Grey ...

  • Page 34

    Command interface Table 12. Standard Commands, 16-bit mode Command Read/Reset Manufacturer Code Device Code Auto Select Extended Block Protection Indicator Block Protection Status Program Blank Verify Command Verify Chip Erase Block Erase Erase/Program Suspend Erase/Program Resume Read CFI Query 1. ...

  • Page 35

    M29DW128F 6.2 Fast Program commands The M29DW128F offers a set of Fast Program commands to improve the programming throughput: Write to Buffer and Program Double and Quadruple Word, Program Double, Quadruple and Octuple Byte Program Unlock Bypass. See either Table ...

  • Page 36

    Command interface 6.2.1 Write to Buffer and Program command The Write to Buffer and Program Command makes use of the device’s 64-byte Write Buffer to speed up programming. 32 Words/64 bytes can be loaded into the Write Buffer. Each Write ...

  • Page 37

    M29DW128F 6.2.2 Write to Buffer and Program Confirm command The Write to Buffer and Program Confirm command is used to confirm a Write to Buffer and Program command and to program the N+1 Words/bytes loaded in the Write Buffer by ...

  • Page 38

    Command interface 6.2.7 Quadruple byte Program command This is used to write four adjacent bytes in x8 mode, simultaneously. The addresses of the four bytes must differ only in A0, DQ15A-1. Five bus write cycles are necessary to issue the ...

  • Page 39

    M29DW128F 6.2.10 Unlock Bypass Program command The Unlock Bypass Program command can be used to program one address in the memory array at a time. The command requires two Bus Write operations, the final write operation latches the address and ...

  • Page 40

    Command interface Table 14. Fast Program Commands, 16-bit mode Command Write to Buffer and Program Write to Buffer and Program Abort and Reset Write to Buffer and Program Confirm Double Word Program Quadruple Word Program Unlock Bypass Unlock Bypass Program ...

  • Page 41

    M29DW128F 6.3 Block Protection commands Blocks or groups of blocks can be protected against accidental program, erase or read operations. The Protection Groups are shown in and Protection Groups. The device block protection scheme is shown in Protection scheme Table ...

  • Page 42

    Command interface 6.3.3 Set Extended Block Protection bit command The Set Extended Block Protection bit command programs the Extended Block Protection bit to ‘1’ thus preventing the second section of the Extended Block from being programmed. A Read/Reset command must ...

  • Page 43

    M29DW128F 6.3.6 Password Verify command The Password Verify Command is used to verify the Password used in Password Protection mode. To verify the 64-bit Password, the complete command sequence must be entered four times at four consecutive addresses selected by ...

  • Page 44

    Command interface 6.3.10 Set Standard Protection mode command The Set Standard Protection Mode command puts the device in Standard Protection mode by programming the Standard Protection Mode Lock bit to ‘1’. Six cycles are required to issue the Standard Protection ...

  • Page 45

    M29DW128F 6.3.14 Clear Non-Volatile Modify Protection bits command This command is used to clear all Non-Volatile Modify Protection bits. No specific block address is required. If the Lock-Down bit is set to ‘1’, the command will fail. Six cycles are ...

  • Page 46

    Command interface Table 15. Block Protection Commands, 8-bit mode Command Set Extended Block Protection bit Verify Extended Block Protection bit Enter Extended Block Exit Extended Block 1. OW Extended Block Protection bit Address (A7-A0=’00011010’), X Don’t Care. All values in ...

  • Page 47

    M29DW128F Table 16. Block Protection Commands, 16-bit mode (continued) Command 1st Add Data Add Data Add Data Verify Non- Volatile Modify 4 555 AA 2AA Protection bit Clear Non- Volatile Modify 6 555 AA 2AA Protection (12)(13)(14) bits Set Lock-Down ...

  • Page 48

    Command interface Table 17. Protection Command Addresses Bit Password Protection Mode Lock bit Address (PL) Standard Protection Mode Lock bit Address (SL) Non-Volatile Modify Protection bit Address (NVMP) Extended Block Protection bit Address (OW) Table 18. Program, Erase Times and ...

  • Page 49

    M29DW128F 7 Status Register The M29DW128F has one Status Register. The Status Register provides information on the current or previous Program or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read ...

  • Page 50

    Status Register 7.3 Error bit (DQ5) The Error bit can be used to identify errors detected by the Program/Erase Controller. The Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the ...

  • Page 51

    M29DW128F Table 19. Status Register bits Operation Address Program Bank Address Program During Erase Bank Address Suspend Write to Buffer and Bank Address Program Abort Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing ...

  • Page 52

    Status Register Figure 9. Toggle flowchart Address of Bank being Programmed or Erased. 52/94 START READ DQ6 ADDRESS = BA READ DQ5 & DQ6 ADDRESS = BA DQ6 NO = TOGGLE YES NO DQ5 = 1 YES ...

  • Page 53

    M29DW128F 8 Dual Operations and Multiple Bank architecture The Multiple Bank Architecture of the M29DW128F gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management ...

  • Page 54

    Dual Operations and Multiple Bank architecture Table 21. Dual Operations allowed in same Bank Status of Bank Read/ Reset Idle Yes Programming No Erasing No Program (6) Yes Suspended (6) Erase Suspended Yes 1. Read Status Register is not a ...

  • Page 55

    M29DW128F 9 Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ...

  • Page 56

    DC and AC parameters 10 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests ...

  • Page 57

    M29DW128F Table 24. Device capacitance Symbol Parameter C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. Table 25. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (1) I Supply ...

  • Page 58

    DC and AC parameters Figure 12. Random Read AC waveforms A0-A22/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH 58/94 tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ M29DW128F tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID AI08970 ...

  • Page 59

    M29DW128F Figure 13. Page Read AC waveforms DC and AC parameters 59/94 ...

  • Page 60

    DC and AC parameters Table 26. Read AC characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC t t Address Valid to Output Valid (Page) AVQV1 PAGE ...

  • Page 61

    M29DW128F Figure 14. Write AC waveforms, Write Enable Controlled A0-A22/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 27. Write AC characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC ...

  • Page 62

    DC and AC parameters Figure 15. Write AC waveforms, Chip Enable Controlled A0-A22/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 28. Write AC characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address ...

  • Page 63

    M29DW128F Figure 16. Toggle and Alternative Toggle bits mechanism, Chip Enable Controlled Address Outside the Bank A0-A22 being Programmed or Erased E G Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased 1. The Toggle ...

  • Page 64

    DC and AC parameters Figure 18. Reset/Block Temporary Unprotect AC waveforms (No Program/Erase ongoing tPLPX Figure 19. Reset/Block Temporary Unprotect During Program/Erase Operation AC waveforms Figure 20. Accelerated Program Timing waveforms V ...

  • Page 65

    M29DW128F Table 30. Reset/Block Temporary Unprotect AC characteristics Symbol Alt RP Low to Read mode, during Program or ( PLYH READY Erase Pulse Width PLPX High to Write Enable Low, Chip Enable ...

  • Page 66

    Package mechanical 11 Package mechanical Figure 21. TSOP56 – 56 lead Plastic Thin Small Outline 20mm, package outline TSOP-b 1. Drawing is not to scale. Table 31. TSOP56 – 56 lead Plastic Thin Small Outline 20mm, ...

  • Page 67

    M29DW128F Figure 22. TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package outline BALL "A1" Drawing is not to scale. Table 32. TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package mechanical ...

  • Page 68

    Part numbering 12 Part numbering Table 33. Ordering information scheme Example: Device type M29 Architecture D = Dual Operation Operating voltage 2.7 to 3.6V CC Device function 128F = 128 Mbit (x8/x16), Multiple Bank, Page, Boot ...

  • Page 69

    M29DW128F Appendix A Block addresses and Read/Modify Protection Groups Table 34. Block Addresses and Protection Groups Size Bank Block (kbytes/KWords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 ...

  • Page 70

    Block addresses and Read/Modify Protection Groups Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 27 64/32 28 64/32 29 64/32 30 64/32 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 ...

  • Page 71

    M29DW128F Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 59 64/32 60 64/32 61 64/32 62 64/32 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 71 64/32 72 ...

  • Page 72

    Block addresses and Read/Modify Protection Groups Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 91 64/32 92 64/32 93 64/32 94 64/32 95 64/32 96 64/32 97 64/32 98 64/32 99 64/32 100 64/32 101 64/32 ...

  • Page 73

    M29DW128F Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 123 64/32 124 64/32 125 64/32 126 64/32 127 64/32 128 64/32 129 64/32 130 64/32 131 64/32 132 64/32 133 64/32 134 64/32 135 64/32 136 ...

  • Page 74

    Block addresses and Read/Modify Protection Groups Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 155 64/32 156 64/32 157 64/32 158 64/32 159 64/32 160 64/32 161 64/32 162 64/32 163 64/32 164 64/32 165 64/32 ...

  • Page 75

    M29DW128F Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 187 64/32 188 64/32 189 64/32 190 64/32 191 64/32 192 64/32 193 64/32 194 64/32 195 64/32 196 64/32 197 64/32 198 64/32 199 64/32 200 ...

  • Page 76

    Block addresses and Read/Modify Protection Groups Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 219 64/32 220 64/32 221 64/32 222 64/32 223 64/32 224 64/32 225 64/32 226 64/32 227 64/32 228 64/32 229 64/32 ...

  • Page 77

    M29DW128F Table 34. Block Addresses and Protection Groups (continued) Size Bank Block (kbytes/KWords) 251 64/32 252 64/32 253 64/32 254 64/32 255 64/32 256 64/32 257 64/32 258 64/32 259 64/32 260 64/32 261 64/32 262 8/4 263 8/4 264 ...

  • Page 78

    Common Flash Interface (CFI) Appendix B Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to ...

  • Page 79

    M29DW128F Table 37. CFI Query System Interface information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 0009h 22h 44h 0000h 23h 46h 0005h 24h ...

  • Page 80

    Common Flash Interface (CFI) Table 38. Device Geometry Definition Address Data x16 x8 27h 4Eh 0018h Device Size = 2 TBGA64 0001h (x16 only) 28h 50h TSOP56 0002h (x8/x16) 29h 52h 0000h Packages 2Ah 54h 0006h Maximum number of bytes ...

  • Page 81

    M29DW128F Table 39. Primary Algorithm-Specific Extended Query table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0033h 45h 8Ah 000Ch 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h ...

  • Page 82

    Common Flash Interface (CFI) Table 39. Primary Algorithm-Specific Extended Query table (continued) Address Data x16 x8 59h B2h 0060h 5Ah B4h 0060h 5Bh B6h 0027h 1. The values given in the above table are valid for both packages. Table 40. ...

  • Page 83

    M29DW128F Appendix C Extended Memory Block The M29DW128F has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 128 Words in x16 mode and 256 bytes in x8 mode ...

  • Page 84

    Extended Memory Block C.2 Customer Lockable Section of the Extended Block The device is delivered with the second section of the Extended Block "Customer Lockable": bits DQ7 and DQ6 are set to '1' and '0' respectively ...

  • Page 85

    M29DW128F Appendix D High Voltage Block Protection The High Voltage Block Protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to for details of the Protection ...

  • Page 86

    High Voltage Block Protection D.2 In-System technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP (1) . This can be achieved without violating the maximum ratings of the components on the microprocessor bus, ...

  • Page 87

    M29DW128F Appendix E Flowcharts Figure 23. Programmer equipment Group Protect flowchart 1. Block Protection Groups are shown in START ADDRESS = GROUP ADDRESS ...

  • Page 88

    Flowcharts Figure 24. Programmer equipment Chip Unprotect flowchart NO ++n = 1000 FAIL 1. Block Protection Groups are shown in 88/94 START PROTECT ALL GROUPS CURRENT GROUP = ...

  • Page 89

    M29DW128F Figure 25. In-System equipment Group Protect flowchart 1. Block Protection Groups are shown can be either when using the In-System Technique to protect the Extended Block START n = ...

  • Page 90

    Flowcharts Figure 26. In-System equipment Chip Unprotect flowchart NO ++n = 1000 YES ISSUE READ/RESET COMMAND FAIL 1. Block Protection Groups are shown in 90/94 START PROTECT ALL GROUPS CURRENT GROUP = 0 ...

  • Page 91

    M29DW128F Figure 27. Write to Buffer and Program flowchart and Pseudo Code NO DQ1 = 1 YES 1. n+1 is the number of addresses to be programmed Write to Buffer and Program Abort and Reset must be issued ...

  • Page 92

    Flowcharts 3. When the block address is specified, any address in the selected block address space is acceptable. However when loading Write Buffer address with data, all addresses must fall within the selected Write Buffer page. 4. DQ7 must be ...

  • Page 93

    M29DW128F Revision history Table 43. Document revision history Date 02-Aug-2005 13-Oct-2005 02-Dec-2005 13-Mar-2006 13-Jun-2006 20-Jun-2006 26-Oct-2006 Revision 1.0 First Issue derived from the M29DW128F/FS datasheet revision 0.5. Table 18: Program, Erase Times and Program, Erase Endurance 2.0 Cycles updated. Datasheet ...

  • Page 94

    Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...