M29DW128F60NF1E STMICROELECTRONICS [STMicroelectronics], M29DW128F60NF1E Datasheet - Page 32

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M29DW128F60NF1E

Manufacturer Part Number
M29DW128F60NF1E
Description
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Command interface
6.1.11
32/94
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final Write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see
Suspend command
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
After programming has started, Bus Read operations in the Bank being programmed output
the Status Register content, while Bus Read operations to the other Bank output the
contents of the memory array. See the section on the Status Register for more details.
Typical program times are given in
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations to the Bank where the
command was issued will continue to output the Status Register. A Read/Reset command
must be issued to reset the error condition and return to Read mode.
One of the Erase Commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
and
Section 6.1.10: Program Resume command
Table
18.
Section 6.1.9: Program
paragraphs).
M29DW128F

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