M29DW128F60NF1E STMICROELECTRONICS [STMicroelectronics], M29DW128F60NF1E Datasheet - Page 79

• Manufacturer Part Number: M29DW128F60NF1E
• Description: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M29DW128F
Table 37.
1. The values given in the above table are valid for both packages.
1Bh
1Ch
1Dh
1Eh
x16
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
CFI Query System Interface information
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00B5h
00C5h
0027h
0036h
0004h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 10mV
Typical timeout per single byte/Word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for byte/Word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
Description
(1)
n
n
times typical
ms
n
Common Flash Interface (CFI)
n
n
times typical
ms
times typical
n
n
times typical
µs
n
µs
512ms
512µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
NA
NA
NA
NA
8s
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