M29DW324DB70N1E NUMONYX [Numonyx B.V], M29DW324DB70N1E Datasheet

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M29DW324DB70N1E

Manufacturer Part Number
M29DW324DB70N1E
Description
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

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FEATURES SUMMARY
March 2008
SUPPLY VOLTAGE
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
MEMORY BLOCKS
DUAL OPERATIONS
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
V
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
EXTENDED MEMORY BLOCK
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
PP
/WP PIN for FAST PROGRAM and
V
and Read
V
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
Dual Bank Memory Array: 16Mbit+16Mbit
Parameter Blocks (Top or Bottom
Location)
Read in one bank while Program or Erase
in other
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Extra block used as security block or to
store additional information
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29DW324DT: 225Ch
Bottom Device Code M29DW324DB:
225Dh
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
CC
PP
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase
Figure 1. Packages
3V Supply Flash Memory
M29DW324DB
M29DW324DT
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
6 x 8mm
FBGA
1/50

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