M29DW640F70N1 NUMONYX [Numonyx B.V], M29DW640F70N1 Datasheet

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M29DW640F70N1

Manufacturer Part Number
M29DW640F70N1
Description
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
Feature summary
December 2007
Supply voltage
– V
– V
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
– Parameter Blocks (at both Top and Bottom)
Dual operations
– While Program or Erase in a group of
Program/Erase Suspend and Resume
– Read from any Block during Program
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
V
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security Code
Extended Memory Block
– Extra block used as security block or to
PP
Read
8Mbit+24Mbit+24Mbit+8Mbit
banks (from 1 to 3), Read in any of the
other banks
Suspend
Erase Suspend
store additional information
/WP pin for Fast Program and Write Protect
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
CC
PP
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
Rev 4
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
ECOPACK
3V Supply Flash Memory
®
packages available
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
6 x 8 mm
FBGA
M29DW640F
www.numonyx.com
1/74
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M29DW640F70N1 Summary of contents

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Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) Feature summary ■ Supply voltage – 2.7V to 3.6V for Program, Erase and CC Read – V =12V for Fast Program (optional) PP ■ Asynchronous Page ...

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Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29DW640F 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.2 Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Contents Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29DW640F List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29DW640F 1 Summary description The M29DW640F Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up ...

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Summary description Figure 1. Logic diagram Table 1. Signal names A0-A21 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE / 8/ / A0-A21 W M29DW640F E ...

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M29DW640F Figure 2. TSOP connections A15 1 A14 A13 A12 A11 A10 A9 A8 A19 A20 M29DW640F A21 /WP RB A18 A17 Summary description 48 A16 ...

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Summary description Figure 3. TFBGA48 connections (top view through package Balls are shorted together via the substrate but not connected to the die. Table 2. Bank architecture Bank Bank Size A ...

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M29DW640F Figure 4. Block addresses (x8) 000000h 8 KByte or 4 KWord 001FFFh 00E000h 8 KByte or 4 KWord 00FFFFh Bank A 010000h 64 KByte or 32 KWord 01FFFFh 0F0000h 64 KByte or 32 KWord 0FFFFFh 100000h 64 KByte or ...

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Summary description Figure 5. Block addresses (x16) 000000h 8 KByte or 4 KWord 000FFFh 007000h 8 KByte or 4 KWord 007FFFh Bank A 008000h 64 KByte or 32 KWord 00FFFFh 078000h 64 KByte or 32 KWord 07FFFFh 080000h 64 KByte ...

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M29DW640F 2 Signal descriptions See Figure 1: Logic diagram connected to this device. 2.1 Address Inputs (A0-A21) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the ...

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Signal descriptions 2.7 Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 V /Write Protect (V PP The V /Write Protect pin provides two functions. The V PP use an external ...

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M29DW640F 2.9 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that ...

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Signal descriptions 2.13 V Ground the reference for all voltage measurements. The device features two V SS which must be connected to the system ground. 16/74 M29DW640F pins both of SS ...

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M29DW640F 3 Bus operations There are five standard bus operations that control the device. These are Bus Read (Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby. Using the multiple bank architecture of the M29DW640F, while programming ...

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Bus operations 3.5 Automatic Standby If CMOS levels (V more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, I Read operation is in progress. 3.6 Special bus operations Additional bus operations ...

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M29DW640F Table 4. Bus operations, BYTE = V Operation E G Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read ...

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Bus operations Table 5. Bus operations, BYTE = V Operation E G Bus Read Bus Write Output Disable Standby Read Manufacturer Code ...

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M29DW640F 4 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in ...

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Command interface The Extended Block Status of the Extended Block can be read using a read operation, A6, A3 and A2 may be set to either V 80h is output on Data Input/Outputs DQ0-DQ7, otherwise 00h is ...

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M29DW640F 4.1.5 Block Erase command The Block Erase command can be used to erase a list of one or more blocks in one or more Banks. It sets all of the bits in the unprotected selected blocks to ’1’. All ...

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Command interface It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command ...

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M29DW640F 4.1.10 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final Write operation latches the address and data ...

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Command interface 4.2.2 Quadruple Word Program command This is used to write a page of four adjacent Words, in x16 mode, in parallel. The addresses of the four Words must differ only in A1 and A0. Five bus write cycles ...

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M29DW640F 4.2.5 Octuple Byte Program This is used to write eight adjacent Bytes mode, in parallel. The addresses of the eight Bytes must differ only in A1, A0 and DQ15A-1. Nine bus write cycles are necessary to issue ...

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Command interface When V is applied to the V PP Unlock Bypass mode and the Unlock Bypass Program command can be issued immediately. 4.2.7 Unlock Bypass Program command The Unlock Bypass Program command can be used to program one address ...

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M29DW640F 4.3.3 Block Protect and Chip Unprotect commands Groups of blocks can be protected against accidental Program or Erase. The Protection Groups are shown in Appendix A , Table 24: Block addresses inside the blocks to be changed. Block Protect ...

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Command interface Table 7. Commands, 8-bit mode, BYTE = V 1st 2nd Command Read/Reset 3 AAA AA 555 55 Auto Select 3 AAA AA 555 55 Program 4 AAA AA 555 55 AAA Double ...

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M29DW640F Table 8. Program, Erase times and Program, Erase Endurance cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend latency time Byte Program ( at-a-time) Word Program ( at-a-time) Chip Program (Byte ...

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Status register 5 Status register The M29DW640F has one Status Register. The Status Register provides information on the current or previous Program or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus ...

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M29DW640F 5.1.2 Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct ...

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Status register Table 9. Status Register Bits Operation Address Program Bank address Program During Erase Bank address Suspend Program Error Bank address Chip Erase Any address Erasing block Block Erase before timeout Non-Erasing block Erasing block Block Erase Non-Erasing block ...

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M29DW640F Figure 7. Toggle flowchart Address of Bank being Programmed or Erased. START READ DQ6 ADDRESS = BA READ DQ5 & DQ6 ADDRESS = BA DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 ...

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Dual operations and multiple bank architecture 6 Dual operations and multiple bank architecture The Multiple Bank Architecture of the M29DW640F gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations ...

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M29DW640F Table 11. Dual operations allowed in same bank Status of bank Read Read Status Array Idle Yes Programming No Erasing No Program (6) Yes Suspended (6) Erase Suspended Yes 1. Read Status Register is not a command. The Status ...

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Maximum ratings 7 Maximum ratings Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are ...

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M29DW640F 8 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

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DC and AC parameters Figure 9. AC measurement Load Circuit V PP Table 14. Device capacitance Symbol Parameter C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. 40/ DEVICE UNDER TEST 0.1µF 0.1µF ...

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M29DW640F Table 15. DC characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (1) I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (1)(2) I CC3 (Program/Erase) V Input Low voltage IL V ...

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DC and AC parameters Figure 10. Random Read AC waveforms A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH 42/74 tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ M29DW640F tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID AI05559 ...

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M29DW640F Figure 11. Page Read AC waveforms DC and AC parameters 43/74 ...

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DC and AC parameters Table 16. Read AC characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC t t Address Valid to Output Valid (Page) AVQV1 PAGE ...

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M29DW640F Figure 12. Write AC waveforms, Write Enable controlled A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH DC and AC parameters tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL AI05560 45/74 ...

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DC and AC parameters Table 17. Write AC characteristics, Write Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Write Enable Low AVWL Input Valid to Write ...

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M29DW640F Figure 13. Write AC waveforms, Chip Enable controlled A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH DC and AC parameters tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL AI05561 47/74 ...

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DC and AC parameters Table 18. Write AC characteristics, Chip Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Chip Enable Low AVEL Input Valid to Chip ...

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M29DW640F Figure 14. Toggle and Alternative Toggle Bits mechanism, Chip Enable controlled Address Outside the Bank A0-A21 Being Programmed or Erased A Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased 1. The ...

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DC and AC parameters Table 19. Toggle and Alternative Toggle Bits AC characteristics Symbol Alt t Address Transition to Chip Enable Low AXEL t Address Transition to Output Enable Low AXGL Figure 16. Reset/Block Temporary Unprotect AC waveforms W, E, ...

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M29DW640F Table 20. Reset/Block Temporary Unprotect AC characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable Low (1) t PHGL (1) t RHWL RB High to Write Enable ...

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Package mechanical 9 Package mechanical Figure 18. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, package outline DIE 1. Drawing is not to scale. Table 21. TSOP48 – 48 lead Plastic Thin Small Outline, ...

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M29DW640F Figure 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline FE BALL "A1" Drawing is not to scale. Table 22. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data Symbol ...

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Part numbering 10 Part numbering Table 23. Ordering information scheme Example: Device Type M29 Architecture D = Dual or Multiple Bank Operating Voltage 2.7 to 3.6V CC Device Function 640F = 64 Mbit (x8/x16), Boot Block, ...

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M29DW640F Appendix A Block addresses Table 24. Block addresses (KBytes/ Block KWords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 ...

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Block addresses Table 24. Block addresses (continued) (KBytes/ Block KWords) 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 ...

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M29DW640F Table 24. Block addresses (continued) (KBytes/ Block KWords) 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 ...

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Block addresses Table 24. Block addresses (continued) (KBytes/ Block KWords) 87 64/32 88 64/32 89 64/32 90 64/32 91 64/32 92 64/32 93 64/32 94 64/32 95 64/32 96 64/32 97 64/32 98 64/32 99 64/32 100 64/32 101 64/32 ...

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M29DW640F Table 24. Block addresses (continued) (KBytes/ Block KWords) 119 64/32 120 64/32 121 64/32 122 64/32 123 64/32 124 64/32 125 64/32 126 64/32 127 64/32 128 64/32 129 64/32 130 64/32 131 64/32 132 64/32 133 64/32 134 ...

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Common Flash Interface (CFI) Appendix B Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to ...

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M29DW640F Table 27. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h ...

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Common Flash Interface (CFI) Table 28. Device Geometry Definition Address Data x16 x8 27h 4Eh 0017h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0003h 2Bh 56h 0000h 2Ch 58h 0003h 2Dh 5Ah 0007h 2Eh 5Ch 0000h 2Fh 5Eh 0020h ...

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M29DW640F Table 29. Primary Algorithm-specific Extended Query table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0033h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h ...

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Common Flash Interface (CFI) Table 29. Primary Algorithm-specific Extended Query table Address Data x16 x8 58h B0h 0017h 59h B2h 0030h 5Ah B4h 0030h 5Bh B6h 0017h Table 30. Security Code Area Address x16 x8 61h C3h, C2h XXXX 62h ...

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M29DW640F Appendix C Extended Memory Block The has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode used ...

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Extended Memory Block Once the Extended Block is programmed and protected, the Exit Extended Block command must be issued to exit the Extended Block mode and return the device to Read mode. Table 31. Extended Block address and data Address ...

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M29DW640F Appendix D Block protection Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to Protection Groups. Once protected, Program and Erase operations within the ...

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Block protection Note: RP can be either at V Extended Block. Table 32. Programmer technique bus operations, BYTE = V Operation E G Block (Group ( Protect Chip Unprotect Block (Group) V ...

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M29DW640F Figure 20. Programmer Equipment Group Protect flowchart 1. Block Protection Groups are shown in START ADDRESS = GROUP ADDRESS Wait 4µs W ...

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Block protection Figure 21. Programmer Equipment Chip Unprotect flowchart NO ++n = 1000 FAIL 1. Block Protection Groups are shown in 70/74 START PROTECT ALL GROUPS CURRENT GROUP ...

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M29DW640F Figure 22. In-System Equipment Group Protect flowchart 1. Block Protection Groups are shown can be either when using the In-System Technique to protect the Extended Block START n = ...

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Block protection Figure 23. In-System Equipment Chip Unprotect flowchart NO ++n = 1000 YES ISSUE READ/RESET COMMAND FAIL 1. Block Protection Groups are shown in 72/74 START PROTECT ALL GROUPS CURRENT GROUP = ...

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M29DW640F Revision history Table 33. Document revision history Date 02-Dec-2005 10-Mar-2006 23-Aug-2006 10-Dec-2007 Revision 1.0 First issue. DQ7 changed to DQ7 for Program, Program During Erase Suspend and Program Error in 2.0 Converted to new template. Updated address values in ...

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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE ...

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