IS63LV1024L ISSI [Integrated Silicon Solution, Inc], IS63LV1024L Datasheet

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IS63LV1024L

Manufacturer Part Number
IS63LV1024L
Description
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet

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IS63LV1024L
Copyright © 2002 Integrated Silicon Solution, Inc.
without notice.
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
08/07/02
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
• Easy memory expansion with
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
FUNCTIONAL BLOCK DIAGRAM
greater noise immunity
options
CE
required
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
8, 10, 12 ns
power-down
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
I/O0-I/O7
A0-A16
VCC
GND
CE
All rights reserved.
and
WE
OE
CE
OE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
ISSI reserves the right to make changes to this specification and its products at any time
1-800-379-4774
DESCRIPTION
The
131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024L is fabricated using
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024L operates from a single 3.3V power
supply and all inputs are TTL-compatible.
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
ISSI
MEMORY ARRAY
COLUMN I/O
IS63LV1024L is a very high-speed, low power,
128K X 8
ISSI
AUGUST 2002
ISSI
®
's
1

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IS63LV1024L Summary of contents

Page 1

... When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024L operates from a single 3.3V power supply and all inputs are TTL-compatible. DECODER MEMORY ARRAY I/O ...

Page 2

... IS63LV1024L PIN CONFIGURATION 32-Pin SOJ I/ I/ Vcc 8 25 GND PIN DESCRIPTIONS A0-A16 Address Inputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input ...

Page 3

... IS63LV1024L TRUTH TABLE Mode Not Selected X (Power-down) Output Disabled H Read H Write L ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Temperature Under Bias BIAS T Storage Temperature STG P Power Dissipation T Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 4

... IS63LV1024L POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions = Max Vcc Operating Supply Current mA Max. OUT I TTL Standby V = Max Current (TTL Inputs Max IH I TTL Standby V = Max Current ...

Page 5

... IS63LV1024L READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to Low-Z Output t (2) LZOE OE to High-Z Output t (2) HZOE CE to Low-Z Output t (2) LZCE CE to High-Z Output ...

Page 6

... IS63LV1024L AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions OHA ...

Page 7

... IS63LV1024L WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time to AW Write End t Address Hold from HA Write End t Address Setup Time SA WE Pulse Width (OE High) t (1) PWE 1 WE Pulse Width (OE Low) t (2) PWE 2 t Data Setup to Write End ...

Page 8

... IS63LV1024L AC WAVEFORMS (1) (WE Controlled HIGH during Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CE LOW DATA UNDEFINED OUT D IN (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE LOW CE LOW DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 9

... IS63LV1024L-12T IS63LV1024L-12H IS63LV1024L-12J IS63LV1024L-12K IS63LV1024L-12B Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 8 IS63LV1024L-8TI IS63LV1024L-8JI IS63LV1024L-8KI IS63LV1024L-8BI 10 IS63LV1024L-10TI IS63LV1024L-10HI IS63LV1024L-10JI IS63LV1024L-10KI IS63LV1024L-10BI 12 IS63LV1024L-12TI IS63LV1024L-12JI IS63LV1024L-12KI IS63LV1024L-12BI Integrated Silicon Solution, Inc. — www.issi.com — Rev. B 08/07/02 Package TSOP (Type II) STSOP (Type I) (8mm x13.4mm) ...

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