M29W160EB70N6T NUMONYX [Numonyx B.V], M29W160EB70N6T Datasheet

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M29W160EB70N6T

Manufacturer Part Number
M29W160EB70N6T
Description
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
FEATURES SUMMARY
March 2008
SUPPLY VOLTAGE
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
35 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
CC
= 2.7V to 3.6V for Program, Erase
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
6 x 8mm
M29W160EB
M29W160ET
FBGA
1/40

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M29W160EB70N6T Summary of contents

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FEATURES SUMMARY ■ SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase CC and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS – 1 Boot Block (Top or ...

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M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Chip Erase Command ...

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M29W160ET, M29W160EB APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SUMMARY DESCRIPTION The M29W160E Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...

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M29W160ET, M29W160EB Figure 3. TSOP Connections 6/40 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W160ET M29W160EB A18 A17 ...

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Figure 4. TFBGA Connections (Top view through package A17 A18 ...

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M29W160ET, M29W160EB Figure 5. Block Addresses (x8) M29W160ET Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte ...

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Figure 6. Block Addresses (x16) M29W160ET Top Boot Block Addresses (x16) FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h Note: ...

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M29W160ET, M29W160EB SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to ...

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BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than ...

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M29W160ET, M29W160EB Table 3. Bus Operations, BYTE = V Operation E V Bus Read IL V Bus Write IL Output Disable X V Standby IH Read Manufacturer V IL Code V Read Device Code IL Note ...

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When an error occurs the memory continues to output the Status Register. A Read/ Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit ...

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M29W160ET, M29W160EB Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6 for value) of the Erase Suspend ...

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Table 4. Commands, 16-bit mode, BYTE = V Command Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 ...

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M29W160ET, M29W160EB Table 5. Commands, 8-bit mode, BYTE = V Command Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock ...

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Table 6. Program, Erase Times and Program, Erase Endurance Cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data ...

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M29W160ET, M29W160EB Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting will set DQ5 to ‘1’. A Bus Read operation to that ad- dress will show the bit is ...

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Figure 7. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL MAXIMUM RATING Stressing the device above ...

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M29W160ET, M29W160EB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...

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Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (1) I CC3 (Program/Erase) V Input Low Voltage IL V Input High ...

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M29W160ET, M29W160EB Figure 11. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...

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Figure 12. Write AC Waveforms, Write Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

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M29W160ET, M29W160EB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

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Figure 14. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable ...

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M29W160ET, M29W160EB PACKAGE MECHANICAL Figure 15. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small ...

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Figure 16. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline FE BALL "A1" Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data Symbol Typ 6.000 ...

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M29W160ET, M29W160EB PART NUMBERING Table 18. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 160E = 16 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = ...

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APPENDIX A. BLOCK ADDRESS TABLE Table 19. Top Boot Block Addresses, M29W160ET Size Address Range # (KBytes) (x8 1FC000h-1FFFFFh 33 8 1FA000h-1FBFFFh 32 8 1F8000h-1F9FFFh 31 32 1F0000h-1F7FFFh 30 64 1E0000h-1EFFFFh 29 64 1D0000h-1DFFFFh 28 64 1C0000h-1CFFFFh 27 ...

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M29W160ET, M29W160EB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine ...

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Table 23. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 0000h 1Eh 3Ch 0000h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...

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M29W160ET, M29W160EB Table 24. Device Geometry Definition Address Data x16 x8 27h 4Eh 0015h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h ...

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Table 25. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...

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M29W160ET, M29W160EB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the Flash memory. Each Block can be protected individually. Once protected, Program and Erase operations on the block ...

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Figure 17. Programmer Equipment Block Protect Flowchart Note: 1. Address Inputs A19-A12 give the address of the block that protected imperative that they remain stable during the operation. 2. During the Protect and Verify phases ...

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M29W160ET, M29W160EB Figure 18. Programmer Equipment Chip Unprotect Flowchart NO = 1000 36/40 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = V IH (1) ...

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Figure 19. In-System Equipment Block Protect Flowchart START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = BLOCK ...

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M29W160ET, M29W160EB Figure 20. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL 38/40 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ...

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REVISION HISTORY Table 28. Document Revision History Date Version 06-Aug-2002 -01 First Issue: originates from M29W160D datasheet dated 24-Jun-2002 9x8mm FBGA48 package replaced by 6x8mm. VDD(min) reduced for -70ns speed class. 27-Nov-2002 1.1 Erase Suspend Latency Time (typical and maximum) ...

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M29W160ET, M29W160EB INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS ...

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