AP4503AGM A-POWER [Advanced Power Electronics Corp.], AP4503AGM Datasheet

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AP4503AGM

Manufacturer Part Number
AP4503AGM
Description
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet

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Part Number:
AP4503AGM
Manufacturer:
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Part Number:
AP4503AGM-HF
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Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH
P-CH
±20
6.9
5.5
RoHS-compliant Product
G1
30
20
-55 to 150
-55 to 150
Rating
2
BV
R
I
BV
R
I
D
D
D1
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
-6.3
±20
-30
-20
-5
AP4503AGM
G2
28mΩ
36mΩ
-6.3A
-30V
6.9A
Units
℃/W
30V
Unit
201126071
W
D2
V
V
A
A
A
S2
1

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AP4503AGM Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 G1 N-channel 30 ±20 3 6 Parameter 3 AP4503AGM BV 30V DSS R 28mΩ DS(ON -30V DSS R 36mΩ DS(ON) I -6. Rating Units P-channel -30 V ± ...

Page 2

... AP4503AGM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V =±20V =-24V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=100A/µs AP4503AGM Min. Typ. Max ±100 - 12 ...

Page 4

... AP4503AGM N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Duty factor=0.5 100us 0.2 1ms 0.1 0.1 10ms 0.05 100ms 0. 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4503AGM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

Page 6

... AP4503AGM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... DC Single Pulse 0.01 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4503AGM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

Page 8

ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4503AGM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does ...

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