APPLICATIONS2SK3132 TOSHIBA [Toshiba Semiconductor], APPLICATIONS2SK3132 Datasheet
APPLICATIONS2SK3132
Manufacturer Part Number
APPLICATIONS2SK3132
Description
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.APPLICATIONS2SK3132.pdf
(6 pages)
Chopper Regulator DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
DCDrain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD =
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
: I
: V
= 25°C (initial), L = 357 μH, R
(Note 1)
(Note 2)
DSS
th
= 2.4~3.4 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK3132
fs
| = 33 S (typ.)
DS
= 10 V, I
= 0.07 Ω (typ.)
DS
−55~150
Rating
35.7
Max
500
500
±30
200
250
525
150
= 500 V)
0.5
50
50
25
G
1
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 50 A
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
2-21F1B
2006-11-06
—
—
2SK3132
Unit: mm
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APPLICATIONS2SK3132 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V = 2.4~3 ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...
Page 3
3 2SK3132 2006-11-06 ...
Page 4
4 2SK3132 2006-11-06 ...
Page 5
Ω 357 μ 2SK3132 1 ⎛ B ⎞ VDSS 2 = ⋅ ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...