MC74HC365ANG ONSEMI [ON Semiconductor], MC74HC365ANG Datasheet - Page 3

• Manufacturer Part Number: MC74HC365ANG
• Description: Hex 3-State Noninverting Buffer with Common Enables
• Manufacturer: ONSEMI [ON Semiconductor]

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
MAXIMUM RATINGS*
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
Symbol
V
V
in
T
I
I
V
P
V
T
I
out
CC
t
V
CC
out
stg
, V
T
r
V
in
V
in
D
CC
, t
L
OH
A
IH
IL
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input
Voltage
Maximum Low−Level Input
Voltage
Minimum High−Level Output
Voltage
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
(Figure 1)
Parameter
Plastic DIP, SOIC or TSSOP Package
Parameter
CC
Parameter
and GND Pins
TSSOP Package†
(Voltages Referenced to GND)
SOIC Package†
V
|I
V
|I
V
|I
V
out
out
out
out
out
in
in
Plastic DIP†
= V
= V
| v 20 μA
| v 20 μA
| v 20 μA
= V
= 0.1 V
IH
IH
V
V
V
V
CC
Test Conditions
CC
CC
CC
CC
http://onsemi.com
– 0.1 V
= 2.0 V
= 3.0 V
= 4.5 V
= 6.0 V
– 0.5 to V
– 0.5 to V
|I
|I
|I
3
– 0.5 to + 7.0
– 65 to + 150
out
out
out
– 55
| v 3.6 mA
| v 6.0 mA
| v 7.8 mA
Min
2.0
Value
0
0
0
0
0
± 20
± 25
± 50
750
500
450
260
CC
CC
+ 125
1000
+ 0.5
+ 0.5
Max
V
600
500
400
6.0
CC
V
Unit
Unit
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
mW
mA
mA
mA
V
_C
_C
_C
ns
CC
V
V
V
V
V
– 55 to
25_C
3.15
0.50
0.90
1.35
1.80
2.48
3.98
5.48
1.5
2.1
4.2
1.9
4.4
5.9
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
Guaranteed Limit
out
This device contains protection
Unused inputs must always be
should be constrained to the
v 85_C
3.15
0.50
0.90
1.35
1.80
2.34
3.84
5.34
1.5
2.1
4.2
1.9
4.4
5.9
v 125_C
in
or V
3.15
0.50
0.90
1.35
1.80
2.20
3.70
5.20
1.5
2.1
4.2
1.9
4.4
5.9
out
) v V
in
Unit
CC
CC
and
V
V
V
).
.