B1005-BD MIMIX [Mimix Broadband], B1005-BD Datasheet

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B1005-BD

Manufacturer Part Number
B1005-BD
Description
35.0-45.0 GHz GaAs MMIC
Manufacturer
MIMIX [Mimix Broadband]
Datasheet
Features
General Description
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a noise figure of 2.7 dB across the band. This
MMIC uses Mimix Broadband’s GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, SATCOM and VSAT applications.
October 2008 - Rev 02-Oct-08
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
Electrical Characteristics (Ambient Temperature T = 25
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=3.5V, Vg=-0.4V Typical)
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
4
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
3
3
Parameter
3
3
their obligation to be compliant with U.S. Export Laws.
1,2,3
1,2,3
1,2,3
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Units
dBm
dBm
dBm
VDC
VDC
GHz
mA
dB
dB
dB
dB
dB
dB
+16.0
Min.
35.0
20.0
35.0
-1.2
4.0
9.0
-
-
-
-
-
+/-1.0
+16.0
+26.0
+18.0
Typ.
+3.5
17.0
23.0
45.0
-0.4
8.0
2.7
50
-
o
+6.0 VDC
180 mA
+0.3 VDC
+5 dBm
-65 to +165
-55 to MTTF Table
MTTF Table
C)
Max.
+4.5
+0.1
45.0
27.0
B1005-BD
154
3.5
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-
-
-
-
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Related parts for B1005-BD

B1005-BD Summary of contents

Page 1

... Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept 3 3 1,2,3 1,2,3 1,2,3 their obligation to be compliant with U.S. Export Laws. B1005-BD Chip Device Layout Absolute Maximum Ratings Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 180 mA Gate Bias Voltage (Vg) +0 ...

Page 2

... U.S. Export Laws. B1005-BD XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA ~1120 Devices 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 Frequency (GHz) Max Median Mean -3sigma XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA ~1080 Devices 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 Frequency (GHz) ...

Page 3

... Min XB1005 Vd1,2,3=4.5 V Id1=28 mA, Id2=42 mA, Id3=84 mA ~1000 Devices 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 Frequency (GHz) Max Median Mean their obligation to be compliant with U.S. Export Laws. B1005-BD XB1005 Vd1,2,3=4.5 V Id1=28 mA, Id2=42 mA, Id3=84 mA ~1120 Devices 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 Frequency (GHz) Max Median Mean -3sigma XB1005 Vd1,2,3=4.5 V Id1=28 mA, Id2=42 mA, Id3=84 mA ~1080 Devices 37 ...

Page 4

... XB1005_S12 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA 0 -10 -20 -30 -40 -50 -60 -70 - XB1005_S22 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA 0 -5 -10 -15 -20 -25 -30 -35 - their obligation to be compliant with U.S. Export Laws. B1005- Frequency (GHz Frequency (GHz) Page ...

Page 5

... U.S. Export Laws. B1005-BD S21 Phase S22 Mag S22 Phase o o Ang dB Ang 138.0651 -29.54354856 32.84849 138.0651 -29.54354856 32.84849 134.529 -29.42189926 22 ...

Page 6

... U.S. Export Laws. B1005-BD S21 Phase S22 Mag S22 Phase o o Ang Ang dB -111. 166 -16.29154547 -39.681715 -114.44935 -15.97990648 -77.24261 -118.0697 -15.87583704 -114 ...

Page 7

... U.S. Export Laws. B1005-BD S21 Phase S22 Mag S22 Phase o o Ang Ang dB 148.3632 -26.23974953 -50.44486 148.3632 -26.23974953 -50.44486 144.71 -25.43012419 54 ...

Page 8

... U.S. Export Laws. B1005-BD S21 Phase S22 Mag S22 Phase o o Ang dB Ang -104.7737 -16.49814505 -9.974573 -107.7251 -16.60740051 -49.54955 -111.2 867 -17.01981045 -87 ...

Page 9

... Engineering designator is 40LN3UA0063) Bond Pad #3 (Vd2) Bond Pad #5 (RF Out) Bond Pad #4 (Vd3) Bond Pad #6 (Vg3) Vd1,2 Out 5 Vg1,2,3 their obligation to be compliant with U.S. Export Laws. B1005-BD 1.715 (0.067) 4 0.577 5 (0.023) 2.400 (0.095) Bond Pad #7 (Vg2) Bond Pad #8 (Vg1) Bypass Capacitors ...

Page 10

... Rth Temperature ° 157.3 deg Celsius 147.6 C/W ° 184.0 deg Celsius 157.3 C/W ° 210.1 deg Celsius 166.1 C/W their obligation to be compliant with U.S. Export Laws. B1005-BD MTTF Hours FITs 8.36E+10 1.20E-02 5.38E+09 1.86E-01 4.79E+08 2.09E+00 MTTF Hours FITs 3.00E+07 3.34E+01 3.07E+06 3.26E+02 4 ...

Page 11

... Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept Vd2 R=7.14 R=16.7 R= R=20 R=25 R=75 Vg2 XB1005 WG Sideband Reject their obligation to be compliant with U.S. Export Laws. B1005-BD Vd3 R=5 R=5 R=5 R=5 RF Out R=20 R=25 R=75 Vg3 XP1001 RF Out 37.0-39.5 GHz On-Chip Temp Comp Detector ...

Page 12

... XB1005 die evaluation module Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. their obligation to be compliant with U.S. Export Laws. B1005-BD Page ...

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