B100NH02L STMICROELECTRONICS [STMicroelectronics], B100NH02L Datasheet - Page 4

• Manufacturer Part Number: B100NH02L
• Description: N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
R
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
G
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
f=1 MHz gate DC
Bias=0
test signal level =20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 25mA, V
Test conditions
= 4.7Ω V
Test conditions
= 20V
= 20V, T
= ± 20V
= V
= 10V, I
= 5V, I
= 10V
= 15V, f = 1MHz,
= 0
= 10V, I
= 10V, I
= 10V, R
Figure
Figure
GS
, I
D
,
13)
14)
D
GS
D
I
D
D
C
= 15A
GS
D
G
= 30A
= 30A
= 30A,
= 250µA
= 125°C
= 30A
= 4.7Ω
= 10V
=0
Min.
Min.
24
1
0.0052
0.007
2850
Typ.
Typ.
47.5
800
120
1.8
40
13
75
50
18
10
7
1
STB100NH02L
0.006
0.011
Max.
Max.
±100
64
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω
Ω