TC7SA32FU TOSHIBA [Toshiba Semiconductor], TC7SA32FU Datasheet

no-image

TC7SA32FU

Manufacturer Part Number
TC7SA32FU
Description
2-Input OR Gate
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TC7SA32FU.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TC7SA32FU
Manufacturer:
NEC
Quantity:
887
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TC7SA32FU(TE85L
Manufacturer:
ASTRODYN
Quantity:
73
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
TC7SA32FU(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TC7SA32FU(TE85L,F)
Manufacturer:
NEC
Quantity:
9 000
2-Input OR Gate
Features
•
•
•
•
•
•
Absolute Maximum Ratings
Low voltage operation : V
High speed operation : t
High Output current
3.6-V tolerant inputs
3.6-V power down protection output
TC74VCX32 equivalent
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
Power dissipation
DC V
Storage temperature range
Note:
Note 1: V
Note 2: High or low state. I
Note 3: V
CC
/ground current
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
CC
OUT
= 0 V
< GND
TC7SA32F,TC7SA32FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
: t
: t
: I
: I
: I
pd
pd
pd
OH
OH
OH
CC
OUT
= 2.8 ns (max) (V
= 3.7 ns (max) (V
= 7.4 ns (max) (V
/I
/I
/I
OL
OL
OL
= 1.8~3.6 V
absolute maximum rating must be observed.
= ±24 mA (min) (V
= ±18 mA (min) (V
= ±6 mA (min) (V
(Ta = 25°C)
Symbol
V
I
V
T
OUT
V
I
I
P
OUT
I
OK
CC
CC
IK
stg
IN
D
CC
CC
CC
= 3.0~3.6 V)
= 2.3~2.7 V)
= 1.8 V)
−0.5~V
CC
CC
CC
= 1.8 V)
= 3.0 V)
= 2.3 V)
−0.5~4.6 (Note 1)
1
CC
−0.5~4.6
−0.5~4.6
−65~150
Rating
±100
−50
−50 (Note 3)
±50
200
+ 0.5 (Note 2)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
TC7SA32F
TC7SA32FU
Unit
mW
mA
mA
mA
mA
°C
V
V
V
TC7SA32F/FU
2007-11-01

Related parts for TC7SA32FU

Image
Part Number
Description
Manufacturer
Datasheet
Request R
TD62001APG
Part Number:
TD62001APG
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD62001APG.pdf (13 pages)
TD74BC541P
Part Number:
TD74BC541P
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD74BC541P.pdf (7 pages)
2SJ567_09
Part Number:
2SJ567_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ567_09.pdf (6 pages)
2SJ610_09
Part Number:
2SJ610_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ610_09.pdf (6 pages)
2SJ681_09
Part Number:
2SJ681_09
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ681_09.pdf (6 pages)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG300J2YS40
Part Number:
MG300J2YS40
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG300J2YS40.pdf (2 pages)
MG100Q2YS11
Part Number:
MG100Q2YS11
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS11.pdf (5 pages)
MP7003
Part Number:
MP7003
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP7003.pdf (7 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)
MG1200V1US51
Part Number:
MG1200V1US51
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG1200V1US51.pdf (4 pages)

TC7SA32FU Summary of contents

Page 1

... CC − −50 (Note ±50 OUT P 200 D I ±100 CC T −65~150 stg absolute maximum rating must be observed. 1 TC7SA32F/FU TC7SA32F TC7SA32FU Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Unit °C 2007-11-01 ...

Page 2

Marking Type name V 4 Logic Diagram IN A > Operating Ranges Characteristics Power supply voltage Input voltage Output voltage Output current Operating temperature range Input rise and fall time Note 4: Data retention only = 0 ...

Page 3

Electrical Characteristics DC Characteristics (Ta = −40~85°C, 2.7 V < V Characteristics High level Input voltage Low level High level Output voltage Low level Input leakage current Power off leakage current Quiescent supply current Increase in I per input CC ...

Page 4

V < Characteristics Characteristics High level Input voltage Low level High level Output voltage Low level Input leakage current Power off leakage current Quiescent supply current AC Characteristics (Ta = −40~85°C, input: t ...

Page 5

Dynamic Switching Characteristics Characteristics Quiet output maximum dynamic V OL Quiet output minimum dynamic V OL Quiet output minimum dynamic V OH Note 11: Parameter guaranteed by design. Capacitive Characteristics Characteristics Input capacitance Power dissipation capacitance Note 12 ...

Page 6

AC Test Circuit AC Waveforms Input Output Output Measure Figure pLH pHL Symbol 3.3 ± 0 ...

Page 7

Package Dimensions Weight: 0.016 g (typ.) 7 TC7SA32F/FU 2007-11-01 ...

Page 8

Package Dimensions Weight: 0.006 g (typ.) 8 TC7SA32F/FU 2007-11-01 ...

Page 9

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords