HYI39S128160FT-7 QIMONDA [Qimonda AG], HYI39S128160FT-7 Datasheet

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HYI39S128160FT-7

Manufacturer Part Number
HYI39S128160FT-7
Description
128-MBit Synchronous DRAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet
October 2007
H Y B 3 9 S 1 2 8 4 0 0 F [ E / T ] ( L )
H Y [ B / I ] 3 9 S 1 2 8 8 0 0 F [ E / T ] ( L )
H Y [ B / I ] 3 9 S 1 2 8 1 6 0 F [ E / T ] ( L )
H Y B3 9 S 12 84 07 F E
1 2 8 - M B i t S y n c h r o n o u s D R A M
G r e e n P r o d u c t
S D R A M
Data Sheet
Rev. 1.32

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HYI39S128160FT-7 Summary of contents

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... IDD for low power option 0 “Transition time” replaced by “Transition Time of Clock (Rise and Fall)” 4 Added HYI39S128800FT-7, HYI39S128800FE-7, HYI39S128160FT-7, HYI39S128160FE-7 and HYB39S128407FE-7 Previous Revision: 2006-10, Rev. 1.20 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ...

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... All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device. Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± ...

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... Standard Operating Temperature ( °C) HYB39S128400FT-7 PC133–222–520 HYB39S128400FTL-7 HYB39S128800FT-7 HYB39S128800FTL-7 HYB39S128160FT-7 HYB39S128160FTL-7 Industrial Operating Temperature (- °C) HYI39S128800FT-7 PC133–222–520 HYI39S128160FT-7 Product Type Speed Grade Standard Operating Temperature ( °C) HYB39S128400FE-7 PC133–222–520 HYB39S128400FEL-7 HYB39S128407FE-7 HYB39S128800FE-7 HYB39S128800FEL-7 HYB39S128160FE-7 HYB39S128160FEL-7 Industrial Operating Temperature (- ° ...

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Chip Configuration This chapter contains the pin configuration table, the TSOP package drawing, and the block diagrams for the ×4, ×8, ×16 organization of the SDRAM. 2.1 Pin Description Listed below are the pin configurations sections for the various ...

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Ball No. Name Pin Buffer Type Type Data Signals ×4 Organization 5 DQ0 I/O LVTTL 11 DQ1 I/O LVTTL 44 DQ2 I/O LVTTL 50 DQ3 I/O LVTTL Data Signals ×8 Organization 2 DQ0 I/O LVTTL 5 DQ1 I/O LVTTL 8 ...

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Ball No. Name Pin Buffer Type Type Power Supplies ×4/×8/×16 Organization V 9 PWR – DDQ V 14 PWR – PWR – SSQ V 41 PWR – SS Not connected ×4 Organization ...

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Package P(G)–TSOPII–54 Listed below are the pin outs of the TSOP package. Rev. 1.32, 2007-10 10122006-I6LJ-WV3H HY[B/I]39S128[40/80/16][0/7]F[E/T](L) 128-MBit Synchronous DRAM Pin Configuration P(G)-TSOPII-54 8 Data Sheet FIGURE 1 ...

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Functional Description This chapter list all defined commands and their usage for this Synchronous DRAM family. Operation Device State 3) Bank Active Idle Bank Precharge Any Precharge All Any 3) Write Active 3) Write with Auto Active precharge 3) ...

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Field Bits Type BL 2 6:4 TM 8:7 WBL 9 12:10 Rev. 1.32, 2007-10 10122006-I6LJ-WV3H Mode Register Definition (BA Description Burst Length Number of sequential bits per DQ related to one read/write command Note: All other ...

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Burst Length Starting Column Address FullPage n Notes 1. For a burst length of two, ...

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Electrical Characteristics 4.1 Operating Conditions Parameter V Input / Output voltage relative Voltage on supply relative Voltage on supply relative to DDQ SS Operating Temperature for HYB... Operating Temperature for ...

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Parameter Supply Voltage I/O Supply Voltage Input high voltage Input low voltage I Output high voltage ( = – 4.0 mA) OUT I Output low voltage ( = 4.0 mA) OUT V Input leakage current, any input(0 V < Output ...

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Parameter Operating Current One bank active, Burst length = 1 Precharge Standby Current in Power Down Mode Recharge Standby Current in Non-Power Down Mode No Operating Current Active state (max. 4 banks) Burst Operating Current Read command cycling Auto Refresh ...

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AC Characteristics Parameter Clock and Clock Enable Clock Frequency Access Time from Clock Clock High Pulse Width Clock Low Pulse Width Transition Time of Clock (Rise and Fall) Setup and Hold Times Input Setup Time Input Hold Time CKE ...

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Parameter Write Cycle Last Data Input to Precharge (Write without Auto Precharge) Last Data Input to Activate(Write with Auto Precharge) DQM Write Mask Latency ° 3.3 ...

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Package Outlines Notes 1. Drawing according to ISO 8015 2. Dimensions General tolerances +/- 0.15 Rev. 1.32, 2007-10 10122006-I6LJ-WV3H HY[B/I]39S128[40/80/16][0/7]F[E/T](L) 128-MBit Synchronous DRAM Package Outline PG-TSOPII-54-4 (top view) 17 Data Sheet FIGURE 3 ...

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List of Figures Figure 1 Pin Configuration P(G)-TSOPII- ...

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List of Tables Table 1 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Edition 2007-10 Published by Qimonda AG Gustav-Heinemann-Ring 212 D-81739 München, Germany © Qimonda AG 2007. All Rights Reserved. Legal Disclaimer The information given in this Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics ...

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