HYB39S256160DTL-8 INFINEON [Infineon Technologies AG], HYB39S256160DTL-8 Datasheet - Page 20

• Manufacturer Part Number: HYB39S256160DTL-8
• Description: 256-MBit Synchronous DRAM
• Manufacturer: INFINEON [Infineon Technologies AG]

4
4.1
Table 10
Parameter
Input / Output voltage relative to
Voltage on
Voltage on
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.Functional
Table 11
Parameter
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQs are disabled, 0 V <
1)
2) All voltages are referenced to
3)
Data Sheet
T
V
with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference
A
IH
= 0 to 70
V
may overshoot to
IN
<
operation should be restricted to recommended operation conditions. Exposure to higher than
recommended voltage for extended periods of time affect device reliability
V
V
V
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
DC Characteristics
DD
DDQ
DD
ο
C
supply relative to
, all other inputs = 0 V)
supply relative to
I
I
OUT
OUT
V
DDQ
= 4.0 mA)
= – 4.0 mA)
V
OUT
+ 2.0 V for pulse width of < 4ns with 3.3V.
V
<
SS
V
V
1)
V
SS
DDQ
V
SS
SS
)
Symbol
V
V
V
T
T
P
I
Symbol
V
V
V
V
V
V
I
I
IL
OUT
OL
A
STG
IN,
DD
DDQ
D
DD
DDQ
IH
IL
OH
OL
V
OUT
20
Limit Values
min.
– 1.0
– 1.0
– 1.0
0
-55
–
–
min.
3.0
3.0
2.0
– 0.3
2.4
–
– 5
– 5
V
Values
IL
may undershoot to -2.0 V for pulse width < 4.0 ns
max.
+4.6
+4.6
+4.6
+70
+150
1
50
max.
3.6
3.6
V
+0.8
–
0.4
+5
+5
HYB39S256[40/80/16]0D[C/T](L)
DDQ
256-MBit Synchronous DRAM
+0.3
Unit
V
V
V
V
V
V
mA
mA
Unit
V
V
V
ο
o
W
mA
C
C
Electrical Characteristics
10072003-13LE-FGQQ
.
Note/
Test Condition
2)
2)
2)3)
2)3)
2)
2)
–
–
Note/
Test Condition
–
–
–
–
–
–
–
Rev. 1.02, 2004-02