HYB39S256160FE-6 QIMONDA [Qimonda AG], HYB39S256160FE-6 Datasheet - Page 4

• Manufacturer Part Number: HYB39S256160FE-6
• Description: 256-MBit Synchronous DRAM
• Manufacturer: QIMONDA [Qimonda AG]

1.2
The HYB39S256[400/800/160]F[E/T/F](L) are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4,
4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates
for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a
system clock. The chip is fabricated with Qimonda’s advanced 0.11-μm 256-MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally
supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and
speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.
All 256-Mbit components are available in P(G)–TSOPII–54 and PG–TFBGA–54 packages.
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
Rev. 1.42, 2007-09
03292006-TMTK-JFEU
Product Type
Standard Operating Temperature
HYB39S256407FE-7
HYB39S256400FF-7
HYB39S256400FE-7
HYB39S256400FFL-7
HYB39S256400FEL-7
HYB39S256800FF-7
HYB39S256800FE-7
HYB39S256800FFL-7
HYB39S256800FEL-7
HYB39S256160FF-7
HYB39S256160FE-7
HYB39S256160FFL-7
HYB39S256160FEL-7
HYB39S256160FF-6
HYB39S256160FE-6
HYB39S256160FFL-6
HYB39S256160FEL-6
Industrial Operating Temperature
HYI39S256800FE-7
HYI39S256160FE-7
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Description
Speed Grade
PC133-222
PC166-333
143MHz 64M x 4 SDRAM
143MHz 32M x 8 SDRAM
143MHz 16M x 16 SDRAM
166MHz 16M x 16 SDRAM
143MHz 32M x 8 SDRAM
143MHz 16M x 16 SDRAM
Description
4
Ordering Information for RoHS Compliant Products
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)
Package
PG-TFBGA-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TFBGA-54
PG-TSOPII-54
PG-TSOPII-54
256-MBit Synchronous DRAM
Internet Data Sheet
Note
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TABLE 2