HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 15

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range..................................................................................... – 55 to + 150 C
Input/output voltage .......................................................................................... – 0.3 to
Power supply voltage
Power dissipation....................................................................................................................... 1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
Recommended Operation and Characteristics for LV-TTL Versions
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Notes
1. All voltages are referenced to
2.
Capacitance
T
Parameter
Input capacitance (CLK)
Input capacitance
(A0 - A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output capacitance (DQ)
Semiconductor Group
A
A
V
-2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
= 0 to 70 C;
= 0 to 70 C;
IH
may overshoot to
V
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
IN
<
V
DDQ
V
V
, all other inputs = 0 V)
SS
DD
I
= 0 V;
= 3.3 V
OUT
I
OUT
V
V
DD
OUT
V
= 2.0 mA)
= – 2.0 mA)
CC
/
V
V
DD
+ 2.0 V for pulse width of < 4ns with 3.3V.
DDQ
V
0.3 V,
,
CC
V
............................................................................. – 0.3 to + 4.6 V
V
DDQ
)
SS
.
f
= 3.3 V
= 1 MHz
Symbol
V
V
V
V
I
I
0.3 V
15
I(L)
O(L)
IH
IL
OH
OL
min.
2.0
– 0.3
2.4
–
– 5
– 5
Symbol
C
C
C
256 MBit Synchronous DRAM
I1
I2
IO
Limit Values
HYB 39S256400/800/160T
min.
2.5
2.5
4.0
max.
V
0.8
–
0.4
5
5
V
CC
IL
Values
+ 0.3
may undershoot to
max.
4.0
5.0
6.5
Unit Notes
V
V
V
V
A
A
V
1998-10-01
CC
1, 2
1, 2
3
3
Unit
pF
pF
pF
+ 0.3 V