HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 16

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Operating Currents
T
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Operating current
t
Outputs Open, Burst Lengt = 4, CL = 3
All banks operated in random access
All banks operated in ping-pong
manner to maximize gapless data
access
Precharge standby current in
Power Down Mode
CS =
Precharge standby current in
Non-Power Down Mode
CS =
No operating current
t
active state (max. 4 banks)
Burst operating current
t
Read command cycling
Auto refresh current
t
Auto Refresh command cycling
Self refresh current
Self Refresh Mode, CKE = 0.2 V
Notes
3. These parameters depend on the cycle rate. These values are measured at 100 MHz for -8
4. These parameters are measured with continuous data stream during read access and all DQ
Semiconductor Group
RC
CK
CK
CK
A
and at 66 MHz for -10 parts. Input signals are changed once during
standby currents when
toggling. CL = 3 and BL = 4 is assumed and the
= 0 to 70 C,
=
= min., CS =
= min.,
= min.,
t
V
V
RCMIN.
IH(MIN.)
IH(MIN.)
,
t
, CKE
, CKE
CK
V
=
V
DD
IH(MIN.)
t
CKMIN.
= 3.3 V
V
V
IL(MAX.)
IH(MAX.)
,
t
CK
= infinity.
0.3 V
t
t
CKE
CKE
CK
CK
= min.
= min.
V
V
16
IH(MIN.)
IL(MAX.)
V
DDQ
current is excluded.
256 MBit Synchronous DRAM
Symbol -8/-8B -10
I
x4
x8
x16
I
I
I
I
I
x4
x8
x16
I
I
CC1
CC2P
CC2N
CC3N
CC3P
CC4
CC5
CC6
HYB 39S256400/800/160T
t
CK
, excepts for ICC6 and for
210
210
210
2
19
45
10
210
210
210
240
2.5
max.
165
165
165
2
16
40
10
165
165
165
195
2.5
1998-10-01
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
3
3
3
3
3
3, 4
3
3