HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 17

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
AC Characteristics
T
Parameter
Clock and Clock Enable
Clock Cycle Time
Clock Frequency
Access Time from Clock
Clock High Pulse Width
Clock Low Pulse Width
Transition time
Setup and Hold Times
Input Setup Time
Input Hold Time
CKE Setup Time
CKE Hold Time
Mode Register Setup time
Power Down Mode Entry Time
Common Parameters
Row to Column Delay Time
Row Precharge Time
Row Active Time
Row Cycle Time
Activate (a) to Activate (b)
Command period
CAS (a) to CAS (b)
Command period
Semiconductor Group
A
= 0 to 70 C;
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
V
SS
= 0 V;
1, 2, 3
V
DD
= 3.3 V
Symb.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
AC
CH
CL
T
IS
IH
CKS
CKH
RSC
SB
RCD
RP
RAS
RC
RRD
CCD
min. max. min. max. min. max.
8
10
3
3
0.5
2
1
2
1
16
0
20
20
50
70
16
1
0.3 V,
-8
t
17
125
100
6
6
10
8
100k 60
T
= 1 ns
Limit Values
10
12
3
3
0.5
2
1
2
1
20
0
20
30
80
20
1
256 MBit Synchronous DRAM
-8B
100
83
6
7
10
10
100k 60
HYB 39S256400/800/160T
10
15
3
3
0.5
2.5
1
2.5
1
20
0
30
30
90
20
1
-10
100
66
7
8
10
10
100k ns
Unit Note
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CLK
1998-10-01
2, 4
5
5
5
5
6
6
6
6
6

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