HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 24

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1. Bank Activate Command Cycle
Semiconductor Group
(CAS latency = 3)
CLK
Address
Command
Row Addr.
T0
Activate
Bank B
Bank B
"H" or "L"
T1
NOP
t
RCD
T
NOP
Col. Addr.
Precharge
Bank B
with Auto
T
Write B
24
t
RC
256 MBit Synchronous DRAM
HYB 39S256400/800/160T
Row Addr.
Activate
Bank A
Bank A
T
t
RRD
T
NOP
Row Addr.
Activate
T
Bank B
Bank B
1998-10-01
SPT03784

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